參數(shù)資料
型號： IDT71342LA35PF
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： 500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
中文描述： 4K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
封裝： PLASTIC, TQFP-64
文件頁數(shù)： 8/13頁
文件大小： 144K
代理商： IDT71342LA35PF
IDT71342SA/LA
HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
COMMERCIAL TEMPERATURE RANGE
6.05
8
TIMING WAVEFORM OF WRITE CYCLE NO. 1, R/
W
CONTROLLED TIMING
(1, 5, 8)
TIMING WAVEFORM OF WRITE CYCLE NO. 2,
CE
CONTROLLED TIMING
(1, 5)
NOTES:
1. R/
W
or
CE
must be High during all address transitions.
2. A write occurs during the overlap (t
EW
or t
WP
) of either
CE
or
SEM
= V
IL
and R/
W
= V
IL
.
3. t
WR
is measured from the earlier of
CE
or R/
W
going High to the end-of-write cycle.
4. During this period, the I/O pins are in the output state, and input signals must not be applied.
5. If the
CE
Low transition occurs simultaneously with or after the R/
W
Low transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal (
CE
or R/
W
) is asserted last.
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured + 500mV from steady state with the Output
Test Load (Figure 2).
8. If
OE
is Low during a R/
W
controlled write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
) to allow the I/O drivers to turn off data to
be placed on the bus for the required t
DW
. If
OE
is High during an R/
W
controlled write cycle, this requirement does not apply and the write pulse can be
as short as the specified t
WP
.
9. To access RAM,
CE
=V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
.
Either condition must be valid for the entire t
EW
time.
2721 drw 11
R/
W
t
WC
ADDRESS
DATA
IN
CE
or
SEM
t
DW
t
WR
t
DH
t
EW
t
AS
t
AW
(9)
(6)
(2)
(3)
CE
or
SEM
2721 drw 10
t
AW
t
AS
t
WR
t
DW
DATA
IN
ADDRESS
t
WC
R/
W
t
WP
t
DH
DATA
OUT
t
WZ
(4)
(4)
t
OW
OE
t
HZ
t
LZ
t
HZ
(9)
(6)
(7)
(2)
(3)
(7)
(7)
相關(guān)PDF資料
PDF描述
IDT71342LA45J 500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
IDT71342LA55J HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE
IDT71342LA55PF 300V N-Channel MOSFET
IDT71342LA70J 300V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
IDT71342LA70PF 650V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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