• 參數(shù)資料
    型號(hào): IDT7132LA35J
    廠商: INTEGRATED DEVICE TECHNOLOGY INC
    元件分類: DRAM
    英文描述: HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM
    中文描述: 2K X 8 DUAL-PORT SRAM, 35 ns, PQCC52
    封裝: 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52
    文件頁數(shù): 3/11頁
    文件大?。?/td> 175K
    代理商: IDT7132LA35J
    6.02
    3
    IDT7132SA/LA AND IDT7142SA/LA
    HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM
    MILITARY AND COMMERCIAL TEMPERATURE RANGES
    7132SA
    7142SA
    Min.
    7132LA
    7142LA
    Symbol
    |l
    Ll
    |
    Parameter
    Input Leakage
    Current
    (1)
    Output Leakage
    Current
    (1)
    Output Low Voltage
    (l/O0-l/O
    7
    )
    Open Drain Output
    Low Voltage (
    BUSY
    ,
    INT
    )
    Output High Voltage
    Supply Current
    Test Conditions
    V
    CC
    = 5.5V,
    V
    IN
    = 0V to V
    CC
    IN
    = GND to V
    CC
    V
    CC
    = 5.5V,
    CE
    = V
    IH
    , V
    OUT
    = 0V to V
    CC
    C
    l
    OL
    = 4mA
    l
    OL
    = 16mA
    l
    OL
    = 16mA
    Max.
    10
    Max.
    Max.
    5
    Unit
    μ
    A
    |l
    LO
    |
    10
    5
    μ
    A
    V
    OL
    0.4
    0.4
    V
    V
    OL
    0.5
    0.5
    V
    V
    OH
    l
    OH
    = -4mA
    V
    IN
    > V
    CC
    -0.2V or < 0.2V
    2.4
    2.4
    V
    NOTE:
    1. At Vcc
    <
    2.0V leakages are undefined.
    2689 tbl 05
    DC ELECTRICAL CHARACTERISTICS OVER THE
    OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
    (V
    CC
    = 5.0V
    ±
    10%)
    DC ELECTRICAL CHARACTERISTICS OVER THE
    OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
    (1,6)
    (V
    CC
    = 5.0V
    ±
    10%)
    7132X20
    (2)
    7132X25
    (3)
    7132X35
    7142X35
    7132X55
    7142X55
    7132X100
    7142X100
    7142X25
    (3)
    Symbol
    Parameter
    Test Conditions
    Version
    Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max.
    Unit
    I
    CC
    Dynamic Operating
    Current (Both Ports
    Active)
    CE
    L
    and
    CE
    R
    = V
    IL
    , MIL.
    Outputs open,
    f = f
    MAX
    (4)
    SA
    LA
    110
    110
    250
    200
    110
    110
    110
    110
    280
    220
    220
    170
    80
    80
    80
    80
    230
    170
    165
    120
    65
    65
    65
    65
    190
    140
    155
    110
    65
    65
    65
    65
    190
    140
    155
    110
    mA
    COM'L. SA
    LA
    I
    SB1
    Standby Current
    (Both Ports - TTL
    Level Inputs)
    CE
    L
    and
    CE
    R
    = V
    IH
    , MIL.
    f = f
    MAX
    (4)
    SA
    LA
    30
    30
    65
    45
    30
    30
    30
    30
    80
    60
    65
    45
    25
    25
    25
    25
    80
    60
    65
    45
    20
    20
    20
    20
    65
    45
    65
    35
    20
    20
    20
    20
    65
    45
    55
    35
    mA
    COM'L. SA
    LA
    I
    SB2
    Standby Current
    CE
    "
    A
    "
    =
    V
    IL
    and
    (One Port - TTL
    Level Inputs)
    MIL.
    SA
    LA
    65
    65
    165
    125
    65
    65
    65
    65
    160
    125
    150
    115
    50
    50
    50
    50
    150
    115
    125
    90
    40
    40
    40
    40
    125
    90
    110
    75
    40
    40
    40
    40
    125
    90
    110
    75
    mA
    CE
    "
    B
    "
    =
    V
    IH
    (7)
    Active Port Outputs COM'L. SA
    Open, f = f
    MAX
    (4)
    LA
    I
    SB3
    Full Standby Current
    (Both Ports - All
    CMOS Level Inputs
    CE
    L
    and
    CE
    R
    > V
    CC
    -0.2V,
    V
    IN
    > V
    CC
    -0.2V or
    V
    IN
    < 0.2V,f = 0
    (5)
    MIL.
    SA
    LA
    1.0
    0.2
    15
    5
    1.0
    0.2
    1.0
    0.2
    30
    10
    15
    5
    1.0
    0.2
    1.0
    0.2
    30
    10
    15
    4
    1.0
    0.2
    1.0
    0.2
    30
    10
    15
    4
    1.0
    0.2
    1.0
    0.2
    30
    10
    15
    4
    mA
    COM'L. SA
    LA
    I
    SB4
    Full Standby Current
    (One Port - All
    CMOS Level Inputs)
    CE
    "
    A
    "
    <
    0.2V and
    CE
    "
    B
    "
    > V
    CC
    -0.2V
    (7)
    V
    IN
    > V
    CC
    -0.2V or
    V
    IN
    < 0.2V,
    Active Port Outputs
    Open, f = f
    MAX
    (4)
    MIL.
    SA
    LA
    60
    60
    155
    115
    60
    60
    60
    60
    155
    115
    145
    105
    45
    45
    45
    45
    145
    105
    110
    85
    40
    40
    40
    40
    110
    85
    100
    70
    40
    40
    40
    40
    110
    80
    95
    70
    mA
    COM'L. SA
    LA
    NOTES:
    1. 'X' in part numbers indicates power rating (SA or LA).
    2. Com'l Only, 0
    °
    C to +70
    °
    C temperature range. PLCC package only.
    3. Not available in DIP packages.
    4. At f = f
    Max
    , address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t
    RC
    , and using “AC TEST CONDITIONS”
    of input levels of GND to 3V.
    5. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
    6. Vcc = 5V, T
    A
    =+25
    °
    C for Typ. and is not production tested. Vcc
    DC
    = 100mA (Typ.)
    7. Port "A" may be either left or right port. Port "B" is opposite from port "A".
    2689 tbl 04
    相關(guān)PDF資料
    PDF描述
    IDT7132LA35JB HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM
    IDT7132LA35L48 HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM
    IDT7132LA35L48B HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM
    IDT7132LA35P HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM
    IDT7132LA35PB HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    IDT7132LA35J8 功能描述:IC SRAM 16KBIT 35NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA(6x8) 包裝:帶卷 (TR)
    IDT7132LA35L48B 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 35NS 48LCC
    IDT7132LA35P 功能描述:IC SRAM 16KBIT 35NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
    IDT7132LA35PDG 功能描述:IC SRAM 16KBIT 35NS 48DIP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
    IDT7132LA55C 功能描述:IC SRAM 16KBIT 55NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8