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參數(shù)資料
| 型號： | IDT7132LA100L48I |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| 中文描述： | 高速2K × 8雙端口靜態(tài)RAM的中斷 |
| 文件頁數(shù)： | 13/16頁 |
| 文件大?。?/td> | 255K |
| 代理商： | IDT7132LA100L48I |
6.42
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges
Timing Waveform of
BUSY
Arbitration Controlled by
CE
Timing
(1)
Timing Waveform of
BUSY
Arbitration Controlled
by Address Match Timing
(1)
Truth Tables
Table I. Non-Contention Read/Write Control
(4)
Left or Right Port
(1)
NOTES:
1.
2.
3.
4.
A
0L
- A
10L
≠
A
0R
- A
10R
If
BUSY
= L, data is not written.
If
BUSY
= L, data may not be valid, see t
WDD
and t
DDD
timing.
'H' = V
IH
, 'L' = V
IL
, 'X' = DON’T CARE, 'Z' = HIGH IMPEDANCE
t
APS
(2)
ADDR
"A"
and
"B"
ADDRESSES MATCH
t
BAC
t
BDC
CE
"B"
CE
"A"
BUSY
"A"
2692 drw 13
BUSY
"B"
ADDRESSES DO NOT MATCH
ADDRESSES MATCH
t
APS
(2)
ADDR
"A"
ADDR
"B"
2692 drw 14
t
BAA
t
BDA
t
RC
or t
WC
NOTES:
1.
2.
All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
If t
APS
is not satisified, the
BUSY
will be asserted on one side or the other, but there is no guarantee on which side
BUSY
will be asserted (7132 only).
R/
W
CE
OE
D
0-7
Function
X
H
X
Z
Port Disabled and in Power-Down Mode, I
SB2
or I
SB4
X
H
X
Z
CE
R
=
CE
L
= V
IH,
Power-Down Mode, I
SB1
or I
SB3
L
L
X
DATA
IN
Data on Port Written into Memory
(2)
H
L
L
DATA
OUT
Data in Memory Output on Port
(3)
X
L
H
Z
High Impedance Outputs
2692 tbl 12
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| IDT7132LA100P | 功能描述:IC SRAM 16KBIT 100NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7132LA20J | 功能描述:IC SRAM 16KBIT 20NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7132LA20J8 | 功能描述:IC SRAM 16KBIT 20NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7132LA20JG | 功能描述:IC SRAM 16KBIT 20NS 52PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
| IDT7132LA20JG | 制造商:INTEGRATED DEVICE TECHNOLOGY 功能描述:DUAL PORT SRAM 16K 7132 PLCC52 |
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