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參數(shù)資料
| 型號： | IDT7130SA35PFGI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| 中文描述： | 高速每1000 × 8雙端口靜態(tài)隨機存取存儲器 |
| 文件頁數(shù)： | 13/19頁 |
| 文件大?。?/td> | 167K |
| 代理商： | IDT7130SA35PFGI |
13
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Port-to-Port Read and
BUSY
(2,3,4)
NOTES:
1. To ensure that the earlier of the two ports wins.
t
BDD
is ignored for slave (IDT7140).
2.
CE
L
=
CE
R
= V
IL
3.
OE
= V
IL
for the reading port.
4. All timng is the same for the left and right ports. Port 'A' may be either the left or right port. Port "B" is opposite fromport "A".
Timing Waveform of Write with
BUSY
(3)
NOTES:
1. t
WH
must be met for both BUSY Input (IDT7140, slave) or Output (IDT7130 master).
2.
BUSY
is asserted on port "B" blocking R/
W
"B"
, until
BUSY
"B"
goes HIGH.
3. All timng is the same for the left and right ports. Port "A" may be either the left or right port. Port "B" is oppsite fromport "A".
BUSY
"B"
2689 drw 13
R/
W
"A"
t
WP
t
WH
t
WB
R/
W
"B"
(2)
(1)
,
t
WC
t
WP
t
DW
t
DH
t
BDD
t
DDD
t
BDA
t
WDD
ADDR
"B"
DATA
OUT"B"
DATA
IN"A"
ADDR
"A"
MATCH
VALID
MATCH
VALID
R
W
"A"
BUSY
"B"
t
APS
(1)
2689 drw 12
t
BAA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7130SA35PG | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| IDT7130SA35PGB | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| IDT7130SA35PGI | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| IDT7130SA35TFG | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
| IDT7130SA35TFGB | HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7130SA35TF | 功能描述:IC SRAM 8KBIT 35NS 64STQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7130SA35TF8 | 功能描述:IC SRAM 8KBIT 35NS 64STQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7130SA45J | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 1Kx8, 52 Pin, Plastic, LDCC |
| IDT7130SA45P | 制造商:Integrated Device Technology Inc 功能描述:1K X 8 MULTI-PORT SRAM, 45 NS, PDIP48 |
| IDT7130SA55C | 功能描述:IC SRAM 8KBIT 55NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
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