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參數(shù)資料
| 型號： | IDT7130SA35PF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 1K X 8 DUAL-PORT SRAM, 35 ns, PQFP64 |
| 封裝： | TQFP-64 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 218K |
| 代理商： | IDT7130SA35PF |
6.01
3
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
7130SA
7140SA
Min.
—
7130LA
7140LA
Symbol
|l
Ll
|
Parameter
Input Leakage
Current
(1)
Output Leakage
Current
(1)
Output Low Voltage
(l/O0-l/O
7
)
Open Drain Output
Low Voltage (
BUSY
,
INT
)
Output High Voltage
Test Conditions
V
CC
= 5.5V,
V
IN
= 0V to V
CC
IN
= GND to V
CC
V
CC
= 5.5V,
CE
= V
IH
, V
OUT
= 0V to V
CC
C
l
OL
= 4mA
l
OL
= 16mA
l
OL
= 16mA
Max.
10
Max.
—
Max.
5
Unit
μ
A
|l
LO
|
—
10
—
5
μ
A
V
OL
—
0.4
—
0.4
V
V
OL
—
0.5
—
0.5
V
V
OH
l
OH
= -4mA
2.4
—
2.4
—
V
Sy
mbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
(2)
V
IN
= 3dV
V
IN
= 3dV
Max. Unit
9
10
2689 tbl 05
pF
pF
2689 tbl 02
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
V
TERM
(2)
Terminal Voltage
with Respect to
GND
T
A
Operating
Temperature
T
BIAS
Temperature
Under Bias
T
STG
Storage
Temperature
Commercial
–0.5 to +7.0
Military
–0.5 to +7.0
Unit
V
0 to +70
–55 to +125
°
C
–55 to +125
–65 to +135
°
C
–55 to +125
–65 to +150
°
C
I
OUT
DC Output
Current
50
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of the specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. VTERM must not exceed Vcc + 0.5 for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc
+ 0.5V.
2689 tbl 01
RECOMMENDED
DC OPERATING CONDITIONS
Symbol
Parameter
V
CC
Supply Voltage
GND
Supply Voltage
V
IH
Input High Voltage
V
IL
Input Low Voltage –0.5
Min.
4.5
0
2.2
Typ.
5.0
0
—
—
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
NOTES:
1. V
IL
(min.) > -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade
Temperature
Military
–55
°
C to +125
°
C
Commercial
0
°
C to +70
°
C
GND
0V
0V
V
CC
5.0V
±
10%
5.0V
±
10%
2689 tbl 03
(1)
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
NOTES:
1. This parameter is determined by device characterization but is not
production tested.
2. 3dv references the interpolated capacitance when the input and
output signals switch from 0V to 3V or from 3V to 0V.
3. 11pF max. for other packages.
CAPACITANCE
(1)
(T
A
= +25
°
C, f = 1.0MHz) TQFP ONLY
(3)
NOTE:
1. At Vcc
<
2.0V leakages are undefined.
2689 tbl 04
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| IDT7130SA35PF8 | 功能描述:IC SRAM 8KBIT 35NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7130SA35TF | 功能描述:IC SRAM 8KBIT 35NS 64STQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7130SA35TF8 | 功能描述:IC SRAM 8KBIT 35NS 64STQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7130SA45J | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 1Kx8, 52 Pin, Plastic, LDCC |
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