參數(shù)資料
    型號(hào): IDT71256L55YB
    廠商: Integrated Device Technology, Inc.
    英文描述: CMOS STATIC RAM 256K (32K x 8-BIT)
    中文描述: 的CMOS靜態(tài)RAM 256K(32K的× 8位)
    文件頁(yè)數(shù): 6/9頁(yè)
    文件大?。?/td> 78K
    代理商: IDT71256L55YB
    7.2
    6
    IDT71256 S/L
    CMOS STATIC RAM 256K (32K x 8-BIT)
    MILITARY AND COMMERCIAL TEMPERATURE RANGES
    AC ELECTRICAL CHARACTERISTICS
    (V
    CC
    = 5.0V
    ±
    10%, All Temperature Ranges)
    71256S55
    (1)
    71256L55
    (1)
    71256S70
    (1)
    71256L70
    (1)
    71256S85
    (1)
    71256L85
    (1)
    71256S100
    (1,3)
    71256L100
    (1,3)
    Symbol
    Parameter
    Min.
    Max.
    Min.
    Max.
    Min.
    Max.
    Min.
    Max.
    Unit
    Read Cycle
    t
    RC
    Read Cycle Time
    55
    70
    85
    100
    ns
    t
    AA
    Address Access Time
    55
    70
    85
    100
    ns
    t
    ACS
    Chip Select Access Time
    55
    70
    85
    100
    ns
    t
    CLZ
    (2)
    t
    CHZ
    (2)
    Chip Deselect to Output in Low-Z
    5
    5
    5
    5
    ns
    Output Enable to Output in Low-Z
    25
    30
    35
    40
    ns
    t
    OE
    Output Enable to Output Valid
    25
    30
    35
    40
    ns
    t
    OLZ
    (2)
    Output Enable to Output in Low-Z
    0
    0
    0
    0
    ns
    t
    OHZ
    (2)
    Output Disable to Output in High-Z
    0
    25
    0
    30
    35
    40
    ns
    t
    OH
    Output Hold from Address Change
    5
    5
    5
    5
    ns
    Write Cycle
    t
    WC
    Write Cycle Time
    55
    70
    85
    100
    ns
    t
    CW
    Chip Select to End-of-Write
    50
    60
    70
    80
    ns
    t
    AW
    Address Valid to End-of-Write
    50
    60
    70
    80
    ns
    t
    AS
    Address Set-up Time
    0
    0
    0
    0
    ns
    t
    WP
    Write Pulse Width
    40
    45
    50
    55
    ns
    t
    WR
    Write Recovery Time
    0
    0
    0
    0
    ns
    t
    DW
    Data to Write Time Overlap
    25
    30
    35
    40
    ns
    t
    DH
    Data Hold from Write Time (
    WE
    )
    0
    0
    0
    0
    ns
    t
    WHZ
    (2)
    Write Enable to Output in High-Z
    25
    30
    35
    40
    ns
    t
    OW
    (2)
    Output Active from End-of-Write
    5
    5
    5
    5
    ns
    NOTES:
    1. –55
    °
    C to +125
    °
    C temperature range only.
    2. This parameter guaranteed by device characterization, but is not production tested.
    3. Also available: 120 and 150 ns military devices.
    2946 tbl 11
    相關(guān)PDF資料
    PDF描述
    IDT71256S70D CMOS STATIC RAM 256K (32K x 8-BIT)
    IDT71256S70DB CMOS STATIC RAM 256K (32K x 8-BIT)
    IDT71256S55D CMOS STATIC RAM 256K (32K x 8-BIT)
    IDT71256S55DB CMOS STATIC RAM 256K (32K x 8-BIT)
    IDT71256S85PB CMOS STATIC RAM 256K (32K x 8-BIT)
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    IDT71256L70DB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 70NS 28CDIP
    IDT71256L70TDB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 70NS 28CDIP
    IDT71256L85DB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 85NS 28CDIP
    IDT71256L85TDB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 85NS 28CDIP
    IDT71256S100DB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 256KBIT 100NS 28CDIP