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參數(shù)資料
| 型號： | IDT71016S20YGI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Filter Module w/out Resistor Network |
| 中文描述： | 64K X 16 STANDARD SRAM, 20 ns, PDSO44 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, PLASTIC, SOJ-44 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 482K |
| 代理商： | IDT71016S20YGI |
6.42
IDT71016, CMOS Static RAM
1 Meg (64K x 16-bit) Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle No. 2
(1)
NOTES:
1. A write occurs during the overlap of a LOW
CS
, LOW
BHE
or
BLE
, and a LOW
WE
.
2.
OE
is continuously HIGH. If during a
WE
controlled write cycle
OE
is LOW, t
WP
must be greater than or equal to t
WHZ
+ t
DW
to allow the I/O drivers to turn off and
data to be placed on the bus for the required t
DW
. If
OE
is HIGH during a
WE
controlled write cycle, this requirement does not apply and the
mnimumwrite pulse is as short as the specified t
WP
.
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the
CS
LOW or
BHE
and
BLE
LOW transition occurs simultaneously with or after the
WE
LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV fromsteady state.
Timing Waveform of Write Cycle No. 1 (
WE
Controlled Timing)
(1,2,4)
NOTES:
1.
WE
is HIGH for Read Cycle.
2. Address must be valid prior to or coincident with the later of
CS
,
BHE
, or
BLE
transition LOW; otherwise t
AA
is the limting parameter.
3. Transition is measured ±200mV fromsteady state.
ADDRESS
DATA
OUT
3210 drw 07
(3)
(3)
(3)
DATA
VALID
t
AA
t
RC
t
OE
t
OLZ
t
CHZ
t
OHZ
OUT
(3)
t
ACS
(3)
t
BLZ
t
CLZ
(2)
t
BE
t
OH
t
BHZ
(3)
(2)
,
OE
CS
BHE
,
BLE
ADDRESS
CS
DATA
IN
3210 drw 08
(5)
(5)
(5)
DATA
IN
VALID
t
WC
t
AS
t
WHZ
(2)
t
CW
t
CHZ
t
OW
t
WR
WE
t
AW
DATA
OUT
t
DW
t
DH
PREVIOUS DATA VALID
DATA VALID
BHE
,
BLE
t
BW
t
WP
(5)
t
BHZ
(3)
,
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相關代理商/技術參數(shù) |
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|---|---|
| IDT71016S20YGI8 | 功能描述:IC SRAM 1MBIT 20NS 44SOJ RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP（14x20） 包裝:托盤 |
| IDT71016S20YI | 功能描述:IC SRAM 1MBIT 20NS 44SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT71016S20YI8 | 功能描述:IC SRAM 1MBIT 20NS 44SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT71024MS15Y | 功能描述:IC SRAM 1MBIT 15NS 32SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT71024MS15Y8 | 功能描述:IC SRAM 1MBIT 15NS 32SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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