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參數(shù)資料
| 型號(hào)： | IDT71016S15YI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 |
| 中文描述： | 64K X 16 STANDARD SRAM, 15 ns, PDSO44 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, PLASTIC, SOJ-44 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 482K |
| 代理商： | IDT71016S15YI |
6.42
IDT71016, CMOS Static RAM
1 Meg (64K x 16-bit) Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings
(1)
3
DC Electrical Characteristics
(1)
(V
CC
= 5.0V ± 10%, V
LC
= 0.2V, V
HC
= V
CC
–0.2V)
Capacitance
(T
A
= +25° C, f = 1.0MHz, SOJ Package)
Parameter
(1)
Recommended DC Operating
Conditions
Symbol
Parameter
DC Electrical Characteristics
(V
CC
= 5.0V ± 10%, Commercial and Industrial Temperature Range)
NOTE:
1. V
IL
(mn.) = –1.5V for pulse width less than tRC/2, once per cycle.
Mn.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
____
V
DD
+0.5
V
V
IL
Input Low Voltage
-0.5
(1)
____
0.8
V
3210 tbl 05
NOTE:
1. This parameter is guaranteed by device characterization, but not production
tested.
Symbol
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
6
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
7
pF
3210 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
CC
+ 0.5V.
Symbol
Rating
Value
Unit
V
TERM
(2)
Terminal Voltage with
Respect to GND
-0.5 to +7.0
V
T
A
Operating Temperature
0 to +70
o
C
T
BIAS
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-55 to +125
o
C
P
T
Power Dissipation
1.25
W
I
OUT
DC Output Current
50
mA
3210 tbl 03
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
|
LI
|
Input Leakage Current
V
CC
= Max., V
IN
= GND to V
CC
___
5
μA
|
LO
|
Output Leakage Current
V
CC
= Max.,
CS
= V
IH
, V
OUT
= GND to V
CC
___
5
μA
V
OL
Output Low Voltage
I
OL
= 8mA, V
CC
= Min.
___
0.4
V
V
OH
Output High Voltage
I
OH
= -4mA, V
CC
= Min.
2.4
___
V
3210 tbl 07
NOTES:
1. All values are maximumguaranteed values.
2. f
MAX
= 1/t
RC
(all address inputs are cycling at f
MAX
); f = 0 means no address input lines are changing
.
71016S12
71016S15
71016S20
Symbol
Parameter
Coml.
Ind.
Coml.
Ind.
Coml.
Ind.
Unit
I
CC
Dynamic Operating Current
CS
< V
IL
, Outputs Open, V
CC
= Max., f = f
MAX
(2)
210
210
180
180
170
170
mA
I
SB
Standby Power Supply Current (TTL Level)
CS
> V
IH
, Outputs Open, V
CC
= Max., F = f
MAX
(2)
60
60
50
50
45
45
mA
I
SB1
Standby Power Supply Current (CMOS Level)
CS
> V
HC
, Outputs Open, V
CC
= Max., f = 0
(2)
V
IN
< V
LC
or V
IN
> V
HC
10
10
10
10
10
10
mA
3210 tbl 08
Grade
Temperature
GND
V
CC
Commercial
0°C to +70°C
0V
5.0V ± 10%
Industrial
–40°C to +85°C
0V
5.0V ± 10%
3210 tbl 04
Recommended Operating
Temperature and Supply Voltage
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71016S-15YI | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT71016S15YI8 | 功能描述:IC SRAM 1MBIT 15NS 44SOJ RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT71016S20PH | 功能描述:IC SRAM 1MBIT 20NS 44TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT71016S20PH8 | 功能描述:IC SRAM 1MBIT 20NS 44TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT71016S20PHG | 功能描述:IC SRAM 1MBIT 20NS 44TSOP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x20） 包裝:托盤 |
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