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| 型號： | IDT70V7339S166BFI |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 高速與3.3V 3.3V的為512k × 18 SYNCHRONOU開戶銀行可切換雙端口靜態(tài)RAM或2.5V的接口 |
| 文件頁數(shù)： | 7/22頁 |
| 文件大?。?/td> | 482K |
| 代理商： | IDT70V7339S166BFI |
6.42
IDT70V7339S
High-Speed 512K x 18 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
(1)
Recommended DC Operating
Conditions with V
DDQ
at 2.5V
Absolute Maximum Ratings
(1)
NOTES:
1. Undershoot of V
IL >
-1.5V for pulse width less than 10ns is allowed.
2. V
TERM
must not exceed V
DDQ
+ 100mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
IL
(0V), and V
DDQX
for that port must be supplied
as indicated above.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
DD
+ 150mV for more than 25% of the cycle time or
4ns maximum and is limted to < 20mA for the period of V
TERM
> V
DD
+ 150mV.
NOTE:
1. This is the parameter T
A
. This is the "instant on" case temperature.
Grade
Ambient
Temperature
GND
V
DD
Commercial
0
O
C to +70
O
C
0V
3.3V
+
150mV
Industrial
-40
O
C to +85
O
C
0V
3.3V
+
150mV
5628 tbl 04
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
DD
Core Supply Voltage
3.15
3.3
3.45
V
V
DDQ
I/O Supply Voltage
(3)
2.4
2.5
2.6
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage
(Address & Control Inputs)
1.7
____
V
DDQ
+ 100mV
(2)
V
V
IH
Input High Voltage - I/O
(3)
1.7
____
V
DDQ
+ 100mV
(2)
V
V
IL
Input Low Voltage
-0.3
(1)
____
0.7
V
5628tbl 05a
Symbol
Rating
Commercial
& Industrial
Unit
V
TERM
(2)
Termnal Voltage
wth Respect to
GND
-0.5 to +4.6
V
T
BIAS
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-65 to +150
o
C
I
OUT
DC Output Current
50
mA
5628 tbl 06
Recommended DC Operating
Conditions with V
DDQ
at 3.3V
NOTES:
1. Undershoot of V
IL >
-1.5V for pulse width less than 10ns is allowed.
2. V
TERM
must not exceed V
DDQ
+ 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
IH
(3.3V), and V
DDQX
for that port must be
supplied as indicated above.
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
DD
Core Supply Voltage
3.15
3.3
3.45
V
V
DDQ
I/O Supply Voltage
(3)
3.15
3.3
3.45
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage
(Address & Control Inputs)
(3)
2.0
____
V
DDQ
+ 150mV
(2)
V
V
IH
Input High Voltage - I/O
(3)
2.0
____
V
DDQ
+ 150mV
(2)
V
V
IL
Input Low Voltage
-0.3
(1)
____
0.8
V
5628 tbl 05b
相關PDF資料 |
PDF描述 |
|---|---|
| IDT70V7339S166DD | HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7339S166DDI | HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7339S200BC | HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7339S200BCI | HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7339S200BF | HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70V7339S166DD | 功能描述:IC SRAM 9MBIT 166MHZ 144TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70V7339S166DDI | 功能描述:IC SRAM 9MBIT 166MHZ 144TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70V7339S200BC | 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7339S200BC8 | 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7339S200BCG | 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
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