參數(shù)資料
型號: IDT70V7339S166BC
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述: 512K X 18 DUAL-PORT SRAM, 12 ns, PBGA256
封裝: 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
文件頁數(shù): 20/22頁
文件大?。?/td> 482K
代理商: IDT70V7339S166BC
6.42
IDT70V7339S
High-Speed 512K x 18 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges
JTAG Timing Specifications
t
JCYC
t
JF
t
JCL
t
JR
t
JCH
JTAG AC Electrical
Characteristics
(1,2,3,4)
70V7339
Symbol
Parameter
Mn.
Max.
Units
t
J CYC
JTAG Clock Input Period
100
____
ns
t
JCH
JTAG Clock HIGH
40
____
ns
t
JCL
JTAG Clock Low
40
____
ns
t
JR
JTAG Clock Rise Time
____
3
(1)
ns
t
JF
JTAG Clock Fall Time
____
3
(1)
ns
t
JRST
JTAG Reset
50
____
ns
t
J RSR
JTAG Reset Recovery
50
____
ns
t
JCD
JTAG Data Output
____
25
ns
t
JDC
JTAG Data Output Hold
0
____
ns
t
JS
JTAG Setup
15
____
ns
t
JH
JTAG Hold
15
____
ns
5628 tbl 12
NOTES:
1. Guaranteed by design.
2. 30pF loading on external output signals.
3. Refer to AC Electrical Test Conditions stated earlier in this document.
4. JTAG operations occur at one speed (10MHz). The base device may run at
any speed specified in this datasheet.
TCK
Device Inputs
(1)
/
TDI/TMS
Device Outputs
(2)
/
TDO
TRST
t
JCD
t
JDC
t
JRST
t
JS
t
JH
t
JRSR
5628 drw 21
,
Figure 5. Standard JTAG Timing
NOTES:
1. Device inputs = All device inputs except TDI, TMS, TRST, and TCK.
2. Device outputs = All device outputs except TDO.
相關(guān)PDF資料
PDF描述
IDT70V7339S166BCI HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7339S166BF HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7339S166BFI HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7339S166DD HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7339S166DDI HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70V7339S166BC8 功能描述:IC SRAM 9MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7339S166BCGI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 166MHZ 256CABGA
IDT70V7339S166BCI 功能描述:IC SRAM 9MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7339S166BCI8 功能描述:IC SRAM 9MBIT 166MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7339S166BF 功能描述:IC SRAM 9MBIT 166MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)