參數(shù)資料
型號： IDT70V7319S200BCI
廠商： Integrated Device Technology, Inc.
英文描述： HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述： 高速與3.3V 3.3V的256 × 18 SYNCHRONOU開戶銀行可切換雙端口靜態(tài)RAM或2.5V的接口
文件頁數(shù)： 7/22頁
文件大?。?/td> 621K
代理商： IDT70V7319S200BCI
6.42
IDT70V7319S
High-Speed 256K x 18 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
(1)
Ambient
Temperature
GND
V
DD
Recommended DC Operating
Conditions with V
DDQ
at 2.5V
Symbol
Parameter
Absolute Maximum Ratings
(1)
Symbol
Rating
NOTES:
1. Undershoot of V
IL >
-1.5V for pulse width less than 10ns is allowed.
2. V
TERM
must not exceed V
DDQ
+ 100mV.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
IL
(0V), and V
DDQX
for that port must be supplied
as indicated above.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
DD
+ 150mV for more than 25% of the cycle time or
4ns maximum and is limted to < 20mA for the period of V
TERM
> V
DD
+ 150mV.
NOTE:
1. This is the parameter T
A
. This is the "instant on" case temperature.
Grade
Commercial
0
O
C to +70
O
C
0V
3.3V
+
150mV
Industrial
-40
O
C to +85
O
C
0V
3.3V
+
150mV
5629 tbl 04
Min.
Typ.
Max.
Unit
V
DD
Core Supply Voltage
3.15
3.3
3.45
V
V
DDQ
I/O Supply Voltage
(3)
2.4
2.5
2.6
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage
(Address & Control Inputs)
1.7
____
V
DDQ
+ 100mV
(2)
V
V
IH
Input High Voltage - I/O
(3)
1.7
____
V
DDQ
+ 100mV
(2)
V
V
IL
Input LowVoltage
-0.3
(1)
____
0.7
V
5629tbl 05a
Commercial
& Industrial
Unit
V
TERM
(2)
Termnal Voltage
wth Respect to
GND
-0.5 to +4.6
V
T
BIAS
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-65 to +150
o
C
I
OUT
DC Output Current
50
mA
5629 tbl 06
Recommended DC Operating
Conditions with V
DDQ
at 3.3V
Symbol
Parameter
NOTES:
1. Undershoot of V
IL >
-1.5V for pulse width less than 10ns is allowed.
2. V
TERM
must not exceed V
DDQ
+ 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
IH
(3.3V), and V
DDQX
for that port must be
supplied as indicated above.
Min.
Typ.
Max.
Unit
V
DD
Core Supply Voltage
3.15
3.3
3.45
V
V
DDQ
I/O Supply Voltage
(3)
3.15
3.3
3.45
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage
(Address & Control Inputs)
(3)
2.0
____
V
DDQ
+ 150mV
(2)
V
V
IH
Input High Voltage - I/O
(3)
2.0
____
V
DDQ
+ 150mV
(2)
V
V
IL
Input LowVoltage
-0.3
(1)
____
0.8
V
5629 tbl 05b
相關(guān)PDF資料
PDF描述
IDT70V7319S200BF HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7319S200BFI HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7319S200DD HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7339S HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7339S133BC HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70V7339S133BC 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
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IDT70V7339S133BCI 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7339S133BCI8 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7339S133BF 功能描述:IC SRAM 9MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
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