參數(shù)資料
型號: IDT70V7319S166DDI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:45m; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms
中文描述: 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
封裝: TQFP-144
文件頁數(shù): 18/22頁
文件大小: 621K
代理商: IDT70V7319S166DDI
6.42
18
IDT70V7319S
High-Speed 256K x 18 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Address Counter Advance
(Flow-through or Pipelined Inputs)
(1,6)
t
CYC2
NOTES:
1.
CE
0
,
UB
/
LB
, and R/
W
= V
IL
; CE
1
and
REPEAT
= V
IH
.
2.
CE
0
,
UB
/
LB
= V
IL
; CE
1
= V
IH
.
3. The "Internal Address" is equal to the "External Address" when
ADS
= V
IL
and equals the counter output when
ADS
= V
IH
.
4. No dead cycle exists during
REPEAT
operation. A READ or WRITE cycle may be coincidental with the counter
REPEAT
cycle: Address loaded by last valid
ADS
load will be accessed. For more information on
REPEAT
function refer to Truth Table II.
5.
CNTEN
= V
IL
advances Internal Address from‘An to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is
written to during this cycle.
6. The counter includes bank address and internal address. The counter will advance across bank boundaries. For example, if the counter is in Bank 0, at address
FFFh, and is advanced one location, it will move to address 0h in Bank 1. By the same token, the counter at FFFh in Bank 63 will advance to 0h in Bank 0.
7. For Pipelined Mode user should add 1 cycle latency for outputs as per timng waveformof read cycle for pipelined operations.
ADDRESS
An
CLK
DATA
IN
Dn
Dn + 1
Dn + 1
Dn + 2
ADS
CNTEN
t
CH2
t
CL2
5629 drw 18
(3)
INTERNAL
An
(5)
An + 1
An + 2
An + 3
An + 4
Dn + 3
Dn + 4
t
SA
t
HA
t
SAD
t
HAD
COUWRITE
WRITE WITH COUNTER
EWRITE
ADDRESS
WITWRITE
t
SD
t
HD
t
SCN
t
HCN
Timing Waveform of Counter Repeat for Flow Through Mode
(2,6,7)
t
CYC2
ADDRESS
An
CLK
DATA
IN
R/
W
REPEAT
5629 drw 19
(3)
INTERNAL
ADS
CNTEN
WRITE TO
ADS
ADDRESS
An
ADVANCE
COUNTER
WRITE TO
An+1
ADVANCE
COUNTER
WRITE TO
An+2
HOLD
COUNTER
WRITE TO
An+2
REPEAT
READ LAST
ADS
ADDRESS
An
DATA
OUT
t
SA
t
HA
,
An
t
SAD
t
HAD
t
SW
t
HW
t
SCN
t
HCN
t
SRPT
t
HRPT
t
SD
t
HD
t
CD1
An+1
An+2
An+2
An
An+1
An+2
An+2
D
0
D
1
D
2
D
3
An
An+1
An+2
An+2
ADVANCE
COUNTER
READ
An+1
ADVANCE
COUNTER
READ
An+2
HOLD
COUNTER
READ
An+2
(4)
相關PDF資料
PDF描述
IDT70V7319S200BC Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:10ms; Turn On Time:10ms; Range:700-ft with SBRX1 Receiver
IDT70V7319S200BCI HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7319S200BF HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7319S200BFI HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7319S200DD HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
相關代理商/技術參數(shù)
參數(shù)描述
IDT70V7319S200BC 功能描述:IC SRAM 4MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7319S200BC8 功能描述:IC SRAM 4MBIT 200MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7339S133BC 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7339S133BC8 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7339S133BCI 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應商設備封裝:8-SOIC 包裝:帶卷 (TR)