參數(shù)資料
型號(hào)： IDT70V7319S166BFI
廠(chǎng)商： Integrated Device Technology, Inc.
英文描述： Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:24"; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms; Range:24"
中文描述： 高速與3.3V 3.3V的256 × 18 SYNCHRONOU開(kāi)戶(hù)銀行可切換雙端口靜態(tài)RAM或2.5V的接口
文件頁(yè)數(shù)： 21/22頁(yè)
文件大?。?/td> 621K
代理商： IDT70V7319S166BFI
6.42
IDT70V7319S
High-Speed 256K x 18 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Identification Register Definitions
Instruction Field
Value
Description
Revision Number (31:28)
0x0
Reserved for version number
IDT Device ID (27:12)
0x309
Defines IDT part number
IDT JEDEC ID (11:1)
0x33
Allows unique identification of device vendor as IDT
ID Register Indicator Bit (Bit 0)
1
Indicates the presence of an ID register
5629 tbl 13
Scan Register Sizes
Register Name
Bit Size
Instruction (IR)
4
Bypass (BYR)
1
Identification (IDR)
32
Boundary Scan (BSR)
Note (3)
5629 tbl 14
System Interface Parameters
Instruction
Code
Description
EXTEST
0000
Forces contents of the boundary scan cells onto the device outputs
(1)
.
Places the boundary scan register (BSR) between TDI and TDO.
BYPASS
1111
Places the bypass register (BYR) between TDI and TDO.
IDCODE
0010
Loads the ID register (IDR) with the vendor ID code and places the
register between TDI and TDO.
HIGHZ
0100
Places the bypass register (BYR) between TDI and TDO. Forces all
device output drivers to a High-Z state.
CLAMP
0011
Uses BYR. Forces contents of the boundary scan cells onto the device
outputs. Places the bypass register (BYR) between TDI and TDO.
SAMPLE/PRELOAD
0001
Places the boundary scan register (BSR) between TDI and TDO.
SAMPLE allows data fromdevice inputs
(2)
and outputs
(1)
to be captured
in the boundary scan cells and shifted serially through TDO. PRELOAD
allows data to be input serially into the boundary scan cells via the TDI.
RESERVED
All other codes
Several combinations are reserved. Do not use codes other than those
identified above.
5629 tbl 15
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, TRST, and TCK.
3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com, or by contacting your local
IDT sales representative.
相關(guān)PDF資料
PDF描述
IDT70V7319S166DD Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:10ms; Turn On Time:10ms; Range:6-ft using 90% reflectance white card
IDT70V7319S166DDI Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:45m; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:1ms; Turn On Time:1ms
IDT70V7319S200BC Photoelectric Sensor; Sensor Input Type:Optical; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Sensor Housing:Rectangular; Turn Off Time:10ms; Turn On Time:10ms; Range:700-ft with SBRX1 Receiver
IDT70V7319S200BCI HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V7319S200BF HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70V7319S166DD 功能描述:IC SRAM 4MBIT 166MHZ 144TQFP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ
IDT70V7319S166DDI 功能描述:IC SRAM 4MBIT 166MHZ 144TQFP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ
IDT70V7319S200BC 功能描述:IC SRAM 4MBIT 200MHZ 256BGA RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線(xiàn)串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7319S200BC8 功能描述:IC SRAM 4MBIT 200MHZ 256BGA RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線(xiàn)串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V7339S133BC 功能描述:IC SRAM 9MBIT 133MHZ 256BGA RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線(xiàn)串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
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