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參數(shù)資料
| 型號： | IDT70V7319S133BF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:50mm; Circuitry:SPDT; Leaded Process Compatible:No; Output Type:PNP; Peak Reflow Compatible (260 C):No; Sensing Mode:Fixed-Field |
| 中文描述： | 256K X 18 DUAL-PORT SRAM, 15 ns, PBGA208 |
| 封裝： | FBGA-208 |
| 文件頁數(shù)： | 15/22頁 |
| 文件大?。?/td> | 621K |
| 代理商： | IDT70V7319S133BF |
6.42
IDT70V7319S
High-Speed 256K x 18 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read-to-Write-to-Read
(
OE
= V
IL
)
(2)
R/
W
ADDRESS
An
An +1
An + 2
An + 2
An + 3
An + 4
DATA
IN
Dn + 2
CE
0
CLK
5629 drw 12
Qn
Qn + 3
DATA
OUT
CE
1
UB
/
LB
t
CD2
t
CKHZ
t
CKLZ
t
CD2
t
SC
t
HC
t
SB
t
HB
t
SW
t
HW
t
SA
t
HA
t
CH2
t
CL2
t
CYC2
READ
NOP
READ
t
SD
t
HD
(3)
(1)
t
SW
t
HW
WRITE
(4)
NOTES:
1. Output state (High, Low, or High-impedance) is determned by the previous cycle control signals.
2.
CE
0
,
UB
/
LB
, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
REPEAT
= V
IH
. "NOP" is "No Operation".
3. Addresses do not have to be accessed sequentially since
ADS
= V
IL
constantly loads the address on the rising edge of the CLK; numbers
are for reference use only.
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
R/
W
ADDRESS
An
An +1
An + 2
An + 3
An + 4
An + 5
DATA
IN
Dn + 3
Dn + 2
CE
0
CLK
5629 drw 13
DATA
OUT
Qn
Qn + 4
CE
1
UB
/
LB
OE
t
CH2
t
CL2
t
CYC2
t
CKLZ
t
CD2
t
OHZ
t
CD2
t
SD
t
HD
READ
WRITE
READ
t
SC
t
HC
t
SB
t
HB
t
SW
t
HW
t
SA
t
HA
(3)
(1)
t
SW
t
HW
(4)
Timing Waveform of Pipelined Read-to-Write-to-Read (
OE
Controlled)
(2)
NOTES:
1. Output state (High, Low, or High-impedance) is determned by the previous cycle control signals.
2.
CE
0
,
UB
/
LB
, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
REPEAT
= V
IH
.
3. Addresses do not have to be accessed sequentially since
ADS
= V
IL
constantly loads the address on the rising edge of the CLK; numbers are for reference
use only.
4. This timng does not meet requirements for fastest speed grade. This waveformindicates how logically it could be done if timng so allows.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70V7319S133BFI | HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7319S133DD | HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7319S133DDI | HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7319S200DDI | HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V7319S166BC | HIGH-SPEED 3.3V 256K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70V7319S133BF8 | 功能描述:IC SRAM 4MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7319S133BFI | 功能描述:IC SRAM 4MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7319S133BFI8 | 功能描述:IC SRAM 4MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V7319S133DD | 功能描述:IC SRAM 4MBIT 133MHZ 144TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70V7319S133DDI | 功能描述:IC SRAM 4MBIT 133MHZ 144TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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