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參數(shù)資料
| 型號： | IDT70V3599S |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 高速與3.3V 3.3V的128/64K × 36 SYNCHRONOU S雙，端口靜態(tài)RAM或2.5V的接口 |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 190K |
| 代理商： | IDT70V3599S |
6.42
IDT70V9379L
High-Speed 32K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
13
ADDRESS
(4)
An
D0
tCH2
tCL2
tCYC2
Q0
Q1
0
CLK
DATAIN
R/W
CNTRST
4857 drw 17
INTERNAL
(3)
ADDRESS
ADS
CNTEN
tSRST tHRST
tSD
tHD
tSW tHW
COUNTER
RESET
WRITE
ADDRESS 0
READ
ADDRESS 0
READ
ADDRESS 1
READ
ADDRESS n
Qn
An + 1
An + 2
READ
ADDRESS n+1
DATAOUT
(5)
tSA tHA
1
An
An + 1
(6)
Ax
tSAD tHAD
tSCN tHCN
(6)
Timing Waveform of Write with Address Counter Advance
(Flow-Through or Pipelined Outputs)(1)
Timing Waveform of Counter Reset (Pipelined Outputs)(2)
ADDRESS
An
CLK
DATAIN
Dn
Dn + 1
Dn + 2
ADS
CNTEN
(7)
tCH2
tCL2
tCYC2
4857 drw 16
INTERNAL
(3)
ADDRESS
An
(7)
An + 1
An + 2
An + 3
An + 4
Dn + 3
Dn + 4
tSA
tHA
tSAD tHAD
WRITE
COUNTER HOLD
WRITE WITH COUNTER
WRITE
EXTERNAL
ADDRESS
WRITE
WITH COUNTER
tSD tHD
NOTES:
1.
CE0, UB, LB, and R/W = VIL; CE1 and CNTRST = VIH.
2. CE0, UB, LB = VIL; CE1 = VIH.
3. The "Internal Address" is equal to the "External Address" when
ADS = VIL and equals the counter output when ADS = VIH.
4. Addresses do not have to be accessed sequentially since
ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only.
5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset cycle. ADDR0 will be accessed. Extra cycles
are shown here simply for clarification.
7.
CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance.
The ‘An +1’ Address is written to during this cycle.
相關PDF資料 |
PDF描述 |
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| IDT70V3599S133DR | HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V3599S133DRI | HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V3599S166BC | HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V3599S166BCI | HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70V3599S166BF | HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70V3599S133BC | 功能描述:IC SRAM 4MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V3599S133BC8 | 功能描述:IC SRAM 4MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT70V3599S133BCGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 133MHZ 256CABGA |
| IDT70V3599S133BCI | 功能描述:IC SRAM 4MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR) |
| IDT70V3599S133BCI8 | 功能描述:IC SRAM 4MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
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