參數(shù)資料
型號(hào): IDT70V3389S6BFI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述: 64K X 18 DUAL-PORT SRAM, 6 ns, PBGA208
封裝: FINE PITCH, BGA-208
文件頁(yè)數(shù): 5/17頁(yè)
文件大小: 176K
代理商: IDT70V3389S6BFI
6.42
IDT70V3389S
High-Speed 64K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges
NOTES:
1. "H" = V
IH,
"L" = V
IL,
"X" = Don't Care.
2.
ADS
,
CNTEN
,
CNTRST
= V
IH
.
3.
OE
is an asynchronous input signal.
&'&()*+,*-(
!#
.
Left Port
Right Port
Names
CE
0L
,
CE
1L
CE
0R
,
CE
1R
Chip Enables
R/
W
L
R/
W
R
Read/Write Enable
OE
L
OE
R
Output Enable
A
0L
- A
15L
A
0R
- A
15R
Address
I/O
0L
- I/O
17L
I/O
0R
- I/O
17R
Data Input/Output
CLK
L
CLK
R
Clock
ADS
L
ADS
R
Address Strobe Enable
CNTEN
L
CNTEN
R
Counter Enable
CNTRST
L
CNTRST
R
Counter Reset
UB
L
- LB
L
UB
R
- LB
R
Byte Enables (9-bit bytes)
V
DDQL
V
DDQR
Power (I/O Bus) (3.3V or 2.5V)
(1)
OPT
L
OPT
R
Option for selecting V
DDQX
(1,2)
V
DD
Power (3.3V)
(1)
V
SS
Ground (0V)
4832 tbl 01
OE
CLK
CE
0
CE
1
UB
LB
R/
W
Upper Byte
I/O
9-18
Lower Byte
I/O
0-8
MODE
X
L
H
H
H
X
High-Z
High-Z
All Bytes Deselected
X
L
H
H
L
L
High-Z
D
IN
Write to Lower Byte Only
X
L
H
L
H
L
D
IN
High-Z
Write to Upper Byte Only
X
L
H
L
L
L
D
IN
D
IN
Write to Both Bytes
L
L
H
H
L
H
High-Z
D
OUT
Read Lower Byte Only
L
L
H
L
H
H
D
OUT
High-Z
Read Upper Byte Only
L
L
H
L
L
H
D
OUT
D
OUT
Read Both Bytes
H
L
H
L
L
X
High-Z
High-Z
Outputs Disabled
4832 tbl 02
NOTES:
1. V
DD
, OPT
X
, and V
DDQX
must be set to appropriate operating levels prior to
applying inputs on the I/Os and controls for that port.
2. OPT
X
selects the operating voltage levels for the I/Os and controls on that port.
If OPT
X
is set to VIH (3.3V), then that port's I/Os and controls will operate at 3.3V
levels and V
DDQX
must be supplied at 3.3V. If OPT
X
is set to VIL (0V), then that
port's I/Os and controls will operate at 2.5V levels and V
DDQX
must be supplied
at 2.5V. The OPT pins are independent of one another—both ports can operate
at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V
with the other at 2.5V.
相關(guān)PDF資料
PDF描述
IDT70V3389S6PRF HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V3389S6PRFI HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V3389S HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V3389S4BC HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70V3389S4BCI HIGH-SPEED 3.3V 64K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70V3389S6PRF 功能描述:IC SRAM 1.125MBIT 6NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V3389S6PRF8 功能描述:IC SRAM 1.125MBIT 6NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70V3399S133BC 功能描述:IC SRAM 2MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V3399S133BC8 功能描述:IC SRAM 2MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V3399S133BCI 功能描述:IC SRAM 2MBIT 133MHZ 256BGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)