參數(shù)資料
型號: IDT70V07S25PF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM
中文描述: 32K X 8 DUAL-PORT SRAM, 25 ns, PQFP80
封裝: 14 X 14 MM, 1.40 MM HEIGHT, TQFP-80
文件頁數(shù): 4/18頁
文件大?。?/td> 246K
代理商: IDT70V07S25PF
6.37
4
IDT70V07S/L
HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM
COMMERCIAL TEMPERATURE RANGE
TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL
Inputs
(1)
Outputs
CE
R/
W
OE
SEM
I/O
0-7
H
X
X
H
High-Z
L
L
X
H
DATA
IN
L
H
L
H
DATA
OUT
X
X
H
X
High-Z
NOTE:
1. A
0L
— A
14L
A
0R
— A
14R.
Mode
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
2943 tbl 02
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL
(1)
Inputs
Outputs
CE
R/
W
OE
SEM
I/O
0-7
H
H
L
L
DATA
OUT
H
X
L
DATA
IN
L
X
X
L
Mode
Read Data in Semaphore Flag
Write I/O
0
into Semaphore Flag
Not Allowed
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from all I/O's (I/O
0
-I/O
7
). These eight semaphores are addressed by A
0
- A
2
.
2943 tbl 03
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade
Temperature
Commercial
0
°
C to +70
°
C
GND
0V
V
CC
3.3V
±
0.3V
2943 tbl 05
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial Unit
V
TERM
(2)
Terminal Voltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
–0.5 to +4.6
V
T
A
0 to +70
°
C
T
BIAS
–55 to +125
°
C
T
STG
–55 to +125
°
C
I
OUT
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.3V for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20mA for the period of V
TERM
> Vcc
+ 0.3V.
2943 tbl 04
CAPACITANCE
(1)
(T
A
= +25
°
C, f = 1.0MHz)TQFP ONLY
Symbol
Parameter
C
IN
Input Capacitance
C
OUT
Output
Capacitance
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
NOTES:
1. This parameter is determined by device characterization but is not
production tested.
2. 3dV represents the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
2943 tbl 07
RECOMMENDED DC OPERATING
CONDITIONS
(2)
Symbol
Parameter
V
CC
Supply Voltage
GND
Supply Voltage
V
IH
Input High Voltage
V
IL
Input Low Voltage
Min.
3.0
0
2.0
–0.3
(1)
Typ.
3.3
0
Max.
3.6
0
V
CC
+0.3 V
0.8
Unit
V
V
V
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.3V.
2943 tbl 06
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