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參數(shù)資料
| 型號： | IDT70V07L55J |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 32K X 8 DUAL-PORT SRAM, 55 ns, PQCC68 |
| 封裝： | 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68 |
| 文件頁數(shù)： | 8/18頁 |
| 文件大?。?/td> | 246K |
| 代理商： | IDT70V07L55J |
6.37
8
IDT70V07S/L
HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM
COMMERCIAL TEMPERATURE RANGE
TIMING WAVEFORM OF WRITE CYCLE NO. 1, R/
W
CONTROLLED TIMING
(1,5,8)
TIMING WAVEFORM OF WRITE CYCLE NO. 2,
CE
CONTROLLED TIMING
(1,5)
R/
W
t
WC
t
HZ
t
AW
t
WR
t
AS
t
WP
DATA
OUT
(2)
t
WZ
t
DW
t
DH
t
OW
OE
ADDRESS
DATA
IN
CE
or
SEM
(6)
(4)
(4)
(3)
2943 drw 09
(7)
(7)
(9)
2943 drw 10
t
WC
t
AS
t
WR
t
DW
t
DH
ADDRESS
DATA
IN
R/
W
t
AW
t
EW
(3)
(2)
(6)
CE
or
SEM
(9)
NOTES:
1. R/
W
or
CE
must be HIGH during all address transitions.
2. A write occurs during the overlap (t
EW
or t
WP
) of a LOW
CE
and a LOW R/
W
for memory array writing cycle.
3. t
WR
is measured from the earlier of
CE
or R/
W
(or
SEM
or R/
W
) going HIGH to the end of write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the
CE
or
SEM
LOW transition occurs simultaneously with or after the R/
W
LOW transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal is asserted last,
CE
or R/
W
.
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured + 200mV from steady state with the Output
Test Load (Figure 2).
8. If
OE
is LOW during R/
W
controlled write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
) to allow the I/O drivers to turn off and data
to be placed on the bus for the required t
DW
. If
OE
is HIGH during an R/
W
controlled write cycle, this requirement does not apply and the write pulse can
be as short as the specified t
WP
.
9. To access RAM,
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. t
EW
must be met for either condition.
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| IDT70V07L55J8 | 功能描述:IC SRAM 256KBIT 55NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT70V07L55PF | 功能描述:IC SRAM 256KBIT 55NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70V07L55PF8 | 功能描述:IC SRAM 256KBIT 55NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT70V07S25J | 功能描述:IC SRAM 256KBIT 25NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
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