參數(shù)資料
型號(hào): IDT70V07L35JI
廠商: Integrated Device Technology, Inc.
英文描述: HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM
中文描述: 高速3.3 32K的× 8雙端口靜態(tài)RAM
文件頁(yè)數(shù): 5/18頁(yè)
文件大?。?/td> 174K
代理商: IDT70V07L35JI
5
IDT70V07S/L
High-Speed 32K x 8 Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs
(1)
Outputs
Truth Table II: Semaphore Read/Write Control
Inputs
(1)
Maximum Operating Temperature
and Supply Voltage
(1)
Grade
Ambient Temperature
Absolute Maximum Ratings
(1)
Symbol
Rating
Capacitance
(1)
(T
A
= +25°C, f = 1.0MHz) TQFP Only
Symbol
Parameter
Recommended DC Operating
Conditions
(2)
Symbol
Parameter
NOTE:
1.
A
0L
— A
14L
A
0R
— A
14R
NOTES:
1.
Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.3V.
3. Ambient Temperature Under Bias. No AC Conditions. Chip Deselected.
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
NOTES:
1.
2.
V
IL
> -1.5V for pulse width less than 10ns.
V
TERM
must not exceed Vcc + 0.3V.
NOTES:
1.
This parameter is determned by device characterization but is not production
tested.
2. C
OUT
also references C
I
/
O
.
NOTE:
1.
There are eight semaphore flags written to via I/O
0
and read fromall I/O's (I/O
0
-I/O
7
). These eight semaphores are addressed by A
0
-A
2
Mode
CE
W
OE
SEM
I/O
0-7
H
X
X
H
High-Z
Deselected: Power-Down
L
L
X
H
DATA
IN
Write to Memory
L
H
L
H
DATA
OUT
Read Memory
X
X
H
X
High-Z
Outputs Disabled
2943 tbl 02
Outputs
Mode
CE
R/
W
OE
SEM
I/O
0-7
H
H
L
L
DATA
OUT
Read Data in Semaphore Flag
H
X
L
DATA
IN
Write I/O
0
into Semaphore Flag
L
X
X
L
____
Not Allowed
2943 tbl 03
Commercial
& Industrial
Unit
V
TERM
(2)
Termnal Voltage
wth Respect to GND
-0.5 to +4.6
V
T
BIAS
(3)
Temperature Under Bias
-55 to +125
o
C
T
STG
StorageTemperature
-65 to +150
o
C
T
JN
Junction Temperature
+150
o
C
I
OUT
DC Output Current
50
mA
2943 tbl 04
GND
Vcc
Commercial
0
O
C to +70
O
C
0V
3.3V
+
0.3
Industrial
-40
O
C to +85
O
C
0V
3.3V
+
0.3
2943 tbl 05
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
3.0
3.3
3.6
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.0
____
V
CC
+0.3
(2)
V
V
IL
Input Low Voltage
-0.3
(1)
____
0.8
V
2943 tbl 06
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
9
pF
C
OUT
(2)
Output Capacitance
V
OUT
= 0V
10
pF
2943 tbl 07
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IDT70V07S35JI HIGH-SPEED 3.3V 32K x 8 DUAL-PORT STATIC RAM
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