參數(shù)資料
型號(hào): IDT70V05S35
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 8K X 8 DUAL-PORT SRAM, 35 ns, CPGA68
封裝: 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68
文件頁(yè)數(shù): 10/22頁(yè)
文件大?。?/td> 159K
代理商: IDT70V05S35
6.42
IDT70V05S/L
High-Speed 3.3V 8K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
18
Truth Table IV — Address BUSY
Arbitration
NOTES:
1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSYX outputs on the IDT70V05 are push
pull, not open drain outputs. On slaves the BUSYX input internally inhibits writes.
2. VIL if the inputs to the opposite port were stable prior to the address and enable inputs of this port. VIH if the inputs to the opposite port became stable after the address and
enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result. BUSYL and BUSYR outputs cannot be low simultaneously.
3. Writes to the left port are internally ignored when BUSYL outputs are driving low regardless of actual logic level on the pin. Writes to the right port are internally ignored when
BUSYR
outputs are driving low regardless of actual logic level on the pin.
Truth Table V — Example of Semaphore Procurement Sequence(1,2,3)
NOTES:
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V05.
2. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O7). These eight semaphores are addressed by A0-A2.
3. CE = VIH, SEM = VIL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Table.
Truth Table III — Interrupt Flag(1)
NOTES:
1. Assumes BUSYL = BUSYR = VIH.
2. If BUSYL = VIL, then no change.
3. If BUSYR = VIL, then no change.
t
r
o
P
tf
e
Lt
r
o
P
t
h
g
i
R
n
o
it
c
n
u
F
R/WL
E
C L
E
O L
A L
2
1
A
- L
0
T
N
I L
/
R WR
E
C R
E
O R
A R
2
1
A
- R
0
T
N
I R
LL
X
F
1
XXXX
X
L )2
(
t
h
g
i
R
t
e
S
T
N
I R
g
a
l
F
X
XXX
X
L
F
1H )3
(
t
h
g
i
R
t
e
s
e
R
T
N
I R
g
a
l
F
XXX
X
L )3
(
LL
X
E
F
1X
tf
e
L
t
e
S
T
N
I L
g
a
l
F
XL
L
E
F
1H )2
(
X
XXX
tf
e
L
t
e
s
e
R
T
N
I L
g
a
l
F
5
1
l
b
t
1
4
9
2
s
t
u
p
n
Is
t
u
p
t
u
O
n
o
it
c
n
u
F
E
C L
E
C R
A L
2
1
A
- L
0
A R
2
1
A
- R
0
Y
S
U
B
L )
1
(
Y
S
U
B
R )
1
(
XX
H
C
T
A
M
O
NH
H
l
a
m
r
o
N
HX
H
C
T
A
MH
H
l
a
m
r
o
N
XH
H
C
T
A
MH
H
l
a
m
r
o
N
LL
H
C
T
A
M)
2
()
2
(ti
b
i
h
n
I
e
ti
r
W
)
3
(
6
1
l
b
t
1
4
9
2
s
n
o
it
c
n
u
FD0 D
- 7
tf
e
LD0 D
- 7
t
h
g
i
Rs
u
t
a
t
S
n
o
it
c
A
o
N1
1
e
rf
e
r
o
h
p
a
m
e
S
e
r
o
h
p
a
m
e
S
o
t
"
0
"
s
e
ti
r
W
tr
o
P
tf
e
L0
1
n
e
k
o
t
e
r
o
h
p
a
m
e
s
a
h
tr
o
p
tf
e
L
e
r
o
h
p
a
m
e
S
o
t
"
0
"
s
e
ti
r
W
tr
o
P
t
h
g
i
R0
1
e
r
o
h
p
a
m
e
s
o
t
s
e
c
a
e
ti
r
w
o
n
s
a
h
e
d
i
s
t
h
g
i
R
.
e
g
n
a
h
c
o
N
e
r
o
h
p
a
m
e
S
o
t
"
1
"
s
e
ti
r
W
tr
o
P
tf
e
L1
0
n
e
k
o
t
e
r
o
h
p
a
m
e
s
n
i
a
t
b
o
tr
o
p
t
h
g
i
R
e
r
o
h
p
a
m
e
S
o
t
"
0
"
s
e
ti
r
W
tr
o
P
tf
e
L1
0
e
r
o
h
p
a
m
e
s
o
t
s
e
c
a
e
ti
r
w
o
n
s
a
h
tr
o
p
tf
e
L
.
e
g
n
a
h
c
o
N
e
r
o
h
p
a
m
e
S
o
t
"
1
"
s
e
ti
r
W
tr
o
P
t
h
g
i
R0
1
n
e
k
o
t
e
r
o
h
p
a
m
e
s
n
i
a
t
b
o
tr
o
p
tf
e
L
e
r
o
h
p
a
m
e
S
o
t
"
1
"
s
e
ti
r
W
tr
o
P
tf
e
L1
1
e
rf
e
r
o
h
p
a
m
e
S
e
r
o
h
p
a
m
e
S
o
t
"
0
"
s
e
ti
r
W
tr
o
P
t
h
g
i
R1
0
n
e
k
o
t
e
r
o
h
p
a
m
e
s
a
h
tr
o
p
t
h
g
i
R
e
r
o
h
p
a
m
e
S
o
t
"
1
"
s
e
ti
r
W
tr
o
P
t
h
g
i
R1
1
e
rf
e
r
o
h
p
a
m
e
S
e
r
o
h
p
a
m
e
S
o
t
"
0
"
s
e
ti
r
W
tr
o
P
tf
e
L0
1
n
e
k
o
t
e
r
o
h
p
a
m
e
s
a
h
tr
o
p
tf
e
L
e
r
o
h
p
a
m
e
S
o
t
"
1
"
s
e
ti
r
W
tr
o
P
tf
e
L1
1
e
rf
e
r
o
h
p
a
m
e
S
7
1
l
b
t
1
4
9
2
相關(guān)PDF資料
PDF描述
70V05L35PF8 8K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
70V05L20J 8K X 8 DUAL-PORT SRAM, 20 ns, PQCC68
70V05L35PF 8K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
70V05S15J8 8K X 8 DUAL-PORT SRAM, 15 ns, PQCC68
70V05S55G 8K X 8 DUAL-PORT SRAM, 55 ns, CPGA68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70V05S35G 功能描述:IC SRAM 64KBIT 35NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70V05S35J 功能描述:IC SRAM 64KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,異步 存儲(chǔ)容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
IDT70V05S35J8 功能描述:IC SRAM 64KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT70V05S35PF 功能描述:IC SRAM 64KBIT 35NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,異步 存儲(chǔ)容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
IDT70V05S35PF8 功能描述:IC SRAM 64KBIT 35NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI