參數(shù)資料
型號: IDT70T9349L9BFI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
中文描述: 4K X 18 DUAL-PORT SRAM, 20 ns, PBGA100
封裝: FPBGA-100
文件頁數(shù): 6/16頁
文件大小: 213K
代理商: IDT70T9349L9BFI
6.42
IDT70T9359/49L
High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges
Preliminary
/'1>'1
&234+
!#
4
8%:44#
/'1>'1
&,234+
4
8%:44#
NOTE:
1. At V
DD
< 2.0V input leakages are undefined.
NOTES:
1. At f = f
MAX
, address and control lines (except Output Enable) are cycling at the maximumfrequency clock cycle of 1/t
CYC
, using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite fromport "A".
4. V
DD
= 2.5V, T
A
= 25
°
C for Typ, and are not production tested. I
DD
DC
(f=0)
= 75mA (Typ).
5.
CE
X
= V
IL
means
CE
0X
= V
IL
and CE
1X
= V
IH
CE
X
= V
IH
means
CE
0X
= V
IH
or CE
1X
= V
IL
CE
X
< 0.2V means
CE
0X
< 0.2V and CE
1X
> V
DD
- 0.2V
CE
X
> V
DD
- 0.2V means
CE
0X
> V
DD
- 0.2V or CE
1X
< 0.2V
"X" represents "L" for left port or "R" for right port.
Symbol
Parameter
Test Conditions
70T9359/49L
Unit
Mn.
Max.
|
LI
|
Input Leakage Current
(1)
V
DD
= 2.6V, V
IN
= 0V t
o
V
DD
___
5
μA
|
LO
|
Output Leakage Current
CE
= V
IH
or CE
1
= V
IL
, V
OUT
= 0V t
o
V
DD
___
5
μA
V
OL
Output Low Voltage
I
OL
= +2mA
___
0.4
V
V
OH
Output High Voltage
I
OH
= -2mA
2.0
___
V
5640 tbl 08
70T9359/49L7
Com'l Only
70T9359/49L9
Com'l & Ind
70T9359/49L12
Com'l Only
Symbol
Parameter
Test Condition
Version
Typ.
(4)
Max.
Typ.
(4)
Max.
Typ.
(4)
Max.
Unit
I
DD
Dynamc Operating
Current (Both
Ports Active)
CE
L
and
CE
R
= V
IL
,
Outputs Disabled,
f = f
MAX
(1)
COML
L
80
200
75
175
70
150
mA
IND
L
____
____
75
220
____
____
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
CE
L
=
CE
R
= V
IH
f = f
MAX
(1)
COML
L
20
60
20
50
20
40
mA
IND
L
____
____
20
70
____
____
I
SB2
Standby
Current (One
Port - TTL
Level Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs
Disabled, f=f
MAX
(1)
COML
L
50
115
47
100
45
85
mA
IND
L
____
____
47
190
____
____
I
SB3
Full Standby
Current (Both
Ports - CMOS
Level Inputs)
Both Ports
CE
L
and
CE
R
>V
DD
- 0.2V,
V
IN
> V
DD
- 0.2V or
V
IN
< 0.2V, f = 0
(2)
COML
L
0.1
3.0
0.1
3.0
0.1
3.0
mA
IND
L
____
____
0.1
3.0
____
____
I
SB4
Full Standby
Current (One
Port - CMOS
Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
DD
- 0.2V
(5)
V
IN
> V
DD
- 0.2V or
V
IN
< 0.2V, Active Port,
Outputs Disabled, f = f
MAX
(1)
COML
L
50
115
47
100
45
85
mA
IND
L
____
____
47
190
____
____
5640 tbl 09
相關(guān)PDF資料
PDF描述
IDT70T9349L9PF HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
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