參數(shù)資料
型號(hào): IDT70T9349L12PFI
廠商: Integrated Device Technology, Inc.
英文描述: HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
中文描述: 高速2.5V的8/4K × 18 SYNCHRONOU仛流水線雙端口靜態(tài)RAM
文件頁數(shù): 15/16頁
文件大?。?/td> 213K
代理商: IDT70T9349L12PFI
6.42
IDT70T9359/49L
High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges
Preliminary
',.,'/7
The IDT70T9359/49 features dual chip enables (refer to Truth Table
I) in order to facilitate rapid and simple depth expansion with no require-
ments for external logic. Figure 4 illustrates how to control the varioius chip
enables in order to expand two devices in depth.
The IDT70T9359/49 can also be used in applications requiring
expanded width, as indicated in Figure 4. Since the banks are allocated
at the discretion of the user, the external controller can be set up to drive
the input signals for the various devices as required to allow for 36-bit or
wider applications.
5640 drw 18
IDT70T9359/49
CE
0
CE
1
CE
1
CE
0
CE
0
CE
1
A
13
/A
12(1)
CE
1
CE
0
V
DD
V
DD
IDT70T9359/49
IDT70T9359/49
IDT70T9359/49
Control Inputs
Control Inputs
Control Inputs
Control Inputs
CNTRST
CLK
ADS
CNTEN
R/
W
LB
,
UB
OE
Figure 4. Depth and Width Expansion with IDT70T9359/49
The IDT70T9359/49 provides a true synchronous Dual-Port Static
RAMinterface. Registered inputs provide mnimal set-up and hold times
on address, data, and all critical control inputs. All internal registers are
clocked on the rising edge of the clock signal, however, the self-timed
internal write pulse is independent of the LOW to HIGH transition of the clock
signal.
An asynchronous output enable is provided to ease asynchronous
bus interfacing. Counter enable inputs are also provided to stall the
operation of the address counters for fast interleaved memory applications.
CE
0
= V
IL
and CE
1
= V
IH
for one clock cycle will power down the
internal circuitry to reduce static power consumption. Multiple chip enables
allow easier banking of multiple IDT70T9359/49's for depth expansion
configurations. When the Pipelined output mode is enabled, two cycles are
required with
CE
0
= V
IL
and CE
1
= V
IH
to re-activate the outputs.
NOTE:
1. A
13
is for IDT70T9359, A
12
is for IDT70T9349.
相關(guān)PDF資料
PDF描述
IDT70T9349L7BF HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT70T9349L7BFI HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT70T9349L7PF HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT70T9349L7PFI HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT70T9349L9BF HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70T9349L9BF 功能描述:IC SRAM 72KBIT 9NS 100FBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70T9349L9PF 功能描述:IC SRAM 72KBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70T9349L9PF8 功能描述:IC SRAM 72KBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,異步 存儲(chǔ)容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
IDT70T9359L12BF 功能描述:IC SRAM 144KBIT 12NS 100FBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70T9359L12PF 功能描述:IC SRAM 144KBIT 12NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8