參數(shù)資料
型號: IDT70T9349L12PF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
中文描述: 4K X 18 DUAL-PORT SRAM, 25 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 2/16頁
文件大小: 213K
代理商: IDT70T9349L12PF
6.42
IDT70T9359/49L
High-Speed 2.5V 8/4K x 18 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges
Preliminary
The IDT70T9359/49 is a high-speed 8/4K x 18 bit synchronous
Dual-Port RAM. The memory array utilizes Dual-Port memory cells
to allow simultaneous access of any address fromboth ports.
Registers on control, data, and address inputs provide mnimal setup
and hold times. The timng latitude provided by this approach allows
systems to be designed with very short cycle times.
With an input data register, the IDT70T9359/49 has been optimzed
for applications having unidirectional or bidirectional data flow in bursts. An
automatic power down feature, controlled by
CE
0
and CE
1,
permts the
on-chip circuitry of each port to enter a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 225mW of power.
Index
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
100 9998 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
100-Pin TQFP
Top View
(6)
A
9L
A
10L
A
11L
A
12L
(1)
NC
NC
NC
LB
L
UB
L
CE
0L
CE
1L
CNTRST
L
R/
W
L
OE
L
V
DD
FT
/PIPE
L
I/O
17L
I/O
16L
V
SS
I/O
15L
I/O
14L
I/O
13L
I/O
12L
I/O
11L
I/O
10L
5640 drw 02
A
8R
A
9R
A
10R
A
11R
A
12R
(1)
NC
NC
NC
LB
R
UB
R
CE
0R
CE
1R
CNTRST
R
R/
W
R
V
SS
OE
R
FT
/PIPE
R
I/O
17R
V
SS
I/O
16R
I/O
15R
I/O
14R
I/O
13R
I/O
12R
I/O
11R
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
C
L
C
L
A
L
V
S
V
S
A
R
C
R
C
R
A
0
A
2
A
3
A
4
A
5
A
6
A
7
I
9
I
8
V
D
I
7
I
6
I
5
I
4
I
3
I
2
V
S
I
1
V
S
I
0
I
1
I
2
I
0
I
4
I
5
I
6
I
7
I
8
I
9
I
1
A
1
I
3
.
V
D
70T9359/49PF
PN100-1
(5)
06/07/02
NOTES:
1. A
12
is a NC for IDT70T9349.
2. All V
DD
pins must be connected to power supply.
3. All V
SS
pins must be connected to ground supply.
4. Package body is approximately 14mmx 14mmx 1.4mm
5. This package code is used to reference the package diagram
6. This text does not indicate orientation of the actual part-marking.
! "#
相關(guān)PDF資料
PDF描述
IDT70T9349L12PFI HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT70T9349L7BF HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT70T9349L7BFI HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT70T9349L7PF HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT70T9349L7PFI HIGH-SPEED 2.5V 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70T9349L12PF8 功能描述:IC SRAM 72KBIT 12NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,異步 存儲容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
IDT70T9349L9BF 功能描述:IC SRAM 72KBIT 9NS 100FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70T9349L9PF 功能描述:IC SRAM 72KBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70T9349L9PF8 功能描述:IC SRAM 72KBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,異步 存儲容量:128K(8K x 16) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:70V25S15PF
IDT70T9359L12BF 功能描述:IC SRAM 144KBIT 12NS 100FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8