參數(shù)資料
型號: IDT70T3589S133BF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述: 64K X 36 DUAL-PORT SRAM, 15 ns, PBGA208
封裝: 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208
文件頁數(shù): 8/28頁
文件大?。?/td> 442K
代理商: IDT70T3589S133BF
6.42
IDT70T3519/99/89S
High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
(1)
Ambient
Temperature
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
Grade
GND
V
DD
Commercial
0
O
C to +70
O
C
0V
2.5V
+
100mV
Industrial
-40
O
C to +85
O
C
0V
2.5V
+
100mV
5666 tbl 04
Recommended DC Operating
Conditions with V
DDQ
at 3.3V
Symbol
Parameter
NOTES:
1. V
IL
(min.) = -1.0V for pulse width less than t
CYC
/2, or 5ns, whichever is less.
2. V
IH
(max.) = V
DDQ
+ 1.0V for pulse width less than t
CYC
/2 or 5ns, whichever is less.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the OPT pin
for that port must be set to V
DD
(2.5V), and V
DDQX
for that port must be supplied as indicated
above.
Min.
Typ.
Max.
Unit
V
DD
Core Supply Voltage
2.4
2.5
2.6
V
V
DDQ
I/O Supply Voltage
(3)
3.15
3.3
3.45
V
V
SS
Ground
0
0
0
V
V
IH
Input High Voltage
(Address, Control
&Data I/O Inputs)
(3)
2.0
____
V
DDQ
+ 150mV
(2)
V
V
IH
Input High Voltage
_
JTAG
1.7
____
V
DD
+ 100mV
(2)
V
V
IH
Input High Voltage -
ZZ, OPT, PIPE/
FT
V
DD
- 0.2V
____
V
DD
+ 100mV
(2)
V
V
IL
Input Low Voltage
-0.3
(1)
____
0.8
V
V
IL
Input Low Voltage -
ZZ, OPT, PIPE/
FT
-0.3
(1)
____
0.2
V
5666 tbl 05b
Recommended DC Operating
Conditions with V
DDQ
at 2.5V
Symbol
Parameter
NOTES:
1. V
IL
(min.) = -1.0V for pulse width less than t
CYC
/2 or 5ns, whichever is less.
2. V
IH
(max.) = V
DDQ
+ 1.0V for pulse width less than t
CYC
/2 or 5ns, whichever is less.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the OPT
pin for that port must be set to V
ss
(0V), and V
DDQX
for that port must be supplied as indicated
above.
Min.
Typ.
Max.
Unit
V
DD
Core Supply Voltage
2.4
2.5
2.6
V
V
DDQ
I/O Supply Voltage
(3)
2.4
2.5
2.6
V
V
SS
Ground
0
0
0
V
V
IH
Input High Volltage
(Address, Control &
Data I/O Inputs)
1.7
____
V
DDQ
+ 100mV
(2)
V
V
IH
Input High Voltage
_
JTAG
1.7
____
V
DD
+ 100mV
(2)
V
V
IH
Input High Voltage -
ZZ, OPT, PIPE/
FT
V
DD
- 0.2V
____
V
DD
+ 100mV
(2)
V
V
IL
Input Low Voltage
-0.3
(1)
____
0.7
V
V
IL
Input Low Voltage -
ZZ, OPT, PIPE/
FT
-0.3
(1)
____
0.2
V
5666 tbl 05a
相關(guān)PDF資料
PDF描述
IDT70T3589S-133BF HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3589S133BFI HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3589S-133BFI HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3589S133DR HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
IDT70T3589S-133DR HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70T3589S133BF8 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T3589S133BFI 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T3589S133BFI8 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T3589S133DR 功能描述:IC SRAM 2MBIT 133MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70T3589S133DRI 功能描述:IC SRAM 2MBIT 133MHZ 208QFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)