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    參數(shù)資料
    型號: IDT7099S
    廠商: Integrated Device Technology, Inc.
    英文描述: JFET-Input Operational Amplifier 8-PDIP 0 to 70
    中文描述: 高速4K的× 9同步雙端口RAM
    文件頁數(shù): 8/9頁
    文件大?。?/td> 131K
    代理商: IDT7099S
    6.23
    8
    IDT7099S
    HIGH-SPEED 4K x 9 SYNCHRONOUS DUAL-PORT RAM
    MILITARY AND COMMERCIAL TEMPERATURE RANGES
    TRUTH TABLE I – READ/WRITE CONTROL
    (1)
    Inputs
    Synchronous
    (3)
    Asynchronous
    CLK
    CE
    Byte R/
    W
    h
    h
    h
    l
    h
    h
    h
    l
    l
    l
    l
    l
    l
    h
    l
    h
    l
    l
    l
    h
    l
    h
    l
    h
    l
    h
    Outputs
    I/O0-7
    High-Z
    DATA
    IN
    High-Z
    DATA
    IN
    DATA
    IN
    DATA
    OUT
    DATA
    IN
    DATA
    OUT
    DATA
    IN
    High-Z
    DATA
    IN
    DATA
    OUT
    DATA
    OUT
    High-Z
    DATA
    OUT
    High-Z
    Bit R/
    h
    h
    l
    l
    h
    h
    l
    l
    l
    h
    h
    h
    h
    W
    Byte
    X
    X
    X
    X
    X
    X
    L
    H
    X
    L
    H
    L
    H
    OE
    Bit
    X
    X
    X
    X
    L
    H
    X
    X
    X
    L
    L
    H
    H
    OE
    I/O8
    High-Z
    High-Z
    DATA
    IN
    DATA
    IN
    Mode
    Deselected, Power Down, Data I/O Disabled
    Deselected, Power Down, Byte Data Input Enabled
    Deselected, Power Down, Bit Data Input Enabled
    Deselected, Power Down, Data Input Enabled
    Write Byte, Read Bit
    Write Byte Only
    Read Byte, Write Bit
    Write Bit Only
    Write Byte, Write Bit
    Read Byte, Read Bit
    Read Bit Only
    Read Byte Only
    Data I/O Disabled
    High-Z
    DATA
    IN
    DATA
    IN
    DATA
    OU
    T
    High-Z
    High-Z
    3007 tbl 09
    FUNCTIONAL DESCRIPTION
    The IDT7099 provides a true synchronous Dual-Port Static
    RAM interface. Registered inputs provide very short set-up
    and hold times on address, data, and all critical control inputs.
    All internal registers are clocked on the rising edge of the clock
    signal. An asynchronous output enable is provided to ease
    asynchronous bus interfacing.
    The internal write pulse width is dependent on the low to
    high transitions of the clock signal allowing the shortest
    possible realized cycle times. Clock enable inputs are
    provided to stall the operation of the address and data input
    registers without introducing clock skew for very fast inter-
    leaved memory applications.
    The data inputs are gated to control on-chip noise in bussed
    applications. The user must guarantee that the BYTE R/
    W
    and
    BIT R/
    W
    pins are low for at least one clock cycle before any
    write is attempted. A High on the
    CE
    input for one clock cycle
    will power down the internal circuitry to reduce static power
    consumption.
    The device has separate Bit Write, Byte Write, Bit Enable,
    and Byte Enable pins to allow for independent control.
    TRUTH TABLE II – CLOCK ENABLE FUNCTION TABLE
    (1)
    Inputs
    Register Inputs
    Register Outputs
    Operating Mode
    Load "1"
    Load "0"
    Hold (do nothing)
    CLK
    (3)
    CLKEN
    (2)
    ADDR
    h
    l
    X
    X
    DATAIN
    h
    l
    X
    X
    ADDR
    H
    L
    NC
    NC
    DATAOUT
    H
    L
    NC
    NC
    l
    l
    h
    H
    X
    NOTES:
    1. 'H' = High voltage level steady state, 'h' = High voltage level one set-up time prior to the low-to-high clock transition, 'L' = Low voltage level steady state
    'l' = Low voltage level one set-up time prior to the Low-to-High clock transition, 'X' = Don't care, 'NC' = No change
    2.
    CLKEN
    = V
    IL
    must be clocked in during Power-Up.
    3. Control signals are initialted and terminated on the rising edge of the CLK, depending on their input level. When R/
    W
    and
    CE
    are low, a write cycle is initiated
    on the low-to-high transition of the CLK. Termination of a write cycle is done on the next low-to-high transistion of the CLK.
    3007 tbl 10
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