參數(shù)資料
型號(hào)： IDT7099S20GB
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： JFET-Input Operational Amplifier 8-SOIC -40 to 85
中文描述： 4K X 9 MULTI-PORT SRAM, CPGA68
封裝： CAVITY UP, PGA-68
文件頁(yè)數(shù)： 4/9頁(yè)
文件大?。?/td> 131K
代理商： IDT7099S20GB
6.23
4
IDT7099S
HIGH-SPEED 4K x 9 SYNCHRONOUS DUAL-PORT RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
IDT7099S15
Com'l. Only
IDT7099S20
IDT7099S25
IDT7099S30
Mil Only
Typ.
160
Symbol
I
CC
Parameter
Dynamic
Operating
Current (Both
Ports Active)
Standby
Current (Both
Ports—TTL
Level Inputs)
Test Conditions
CE
= V
IL
Outputs Open
f = fm
AX
(1)
Version Typ.
Mil.
Max.
—
Typ. Max.
170
Typ.
160
Max.
290
Max.
270
Unit
mA
—
310
Com’l.
180
300
170
290
160
270
—
—
I
SB1
CE
L and
CE
R = V
IH
f = fm
AX
(1)
Mil.
—
—
85
140
80
130
80
110
mA
Com’l.
90
140
85
130
80
110
—
—
I
SB2
Standby
Current (One
Port—TTL
Level Inputs)
CE
'A'
= V
IL
and
CE
'B'
= V
IH
(3)
Active Port
Outputs Open,
f = fm
AX
(1)
Mil.
—
—
150
210
140
200
140
180
mA
Com’l.
160
210
150
200
140
180
—
—
I
SB3
Full Standby
Current (Both
Ports—CMOS V
IN
≥
V
CC
– 0.2V
Level Inputs)
or V
IN
≤
0.2V, f = 0
(2)
Full Standby
CE
'A'
<0.2V and
CE
'B '
> V
CC
Current (One
-0.2V
(3),
V
IN
≥
V
CC
– 0.2V or
Port—CMOS
V
IN
≤
0.2V, Active Port
Level Inputs)
Outputs Open, f = fm
AX
(1)
Both Ports
CE
R
and
CE
L
≥
V
CC
– 0.2V
Mil.
—
—
10
20
10
20
10
20
mA
Com’l.
10
15
10
—
10
—
—
I
SB4
Mil.
—
—
145
200
135
190
135
170
mA
Com’l.
155
200
145
190
135
170
—
—
NOTES:
1. At f = fmax, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of the 1/t
CLK
, using
"AC TEST CONDITIONS" of input levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. Vcc = 5V, TA = 25
°
C for Typ, and are not production tested. I
CC DC
= 150mA (Typ).
3007 tbl 06
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
IDT7099S
Min.
Symbol
Parameter
Test Condition
Max.
Unit
μ
A
μ
A
V
V
|I
LI
|
|I
LO
|
V
OL
V
OH
Input Leakage Current
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
V
CC
= 5.5V, V
IN
= 0V to V
CC
CE
= V
IH
, VOUT = 0V to V
CC
I
OL
= 4mA
I
OL
= –4mA
—
—
—
2.4
10
10
0.4
—
NOTE:
1. Input leakages are undefined at V
CC
≤
2.0V.
3007 tbl 05
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(4)
(V
CC
= 5V
±
10%)
3007 tbl 07
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns
1.5V
1.5V
Figures 1, 2, and 3
相關(guān)PDF資料
PDF描述
IDT7099S20J JFET-Input Operational Amplifier 8-SOIC -40 to 85
IDT7099S20JB JFET-Input Operational Amplifier 8-SOIC -40 to 85
IDT7099S20PF JFET-Input Operational Amplifier 8-PDIP -40 to 85
IDT7099S20PFB JFET-Input Operational Amplifier 8-PDIP -40 to 85
IDT7099S25G HIGH-SPEED 4K x 9 SYNCHRONOUS DUAL-PORT RAM
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