參數(shù)資料
型號(hào): IDT709389L7PF
英文描述: x18 Dual-Port SRAM
中文描述: x18雙端口SRAM
文件頁數(shù): 13/15頁
文件大?。?/td> 190K
代理商: IDT709389L7PF
6.42
IDT70V9379L
High-Speed 32K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
7
AC Electrical Characteristics Over the Operating Temperature Range
(Read and Write Cycle Timing)(3,4) (VCC = 3.3V ± 0.3V, TA = 0°C to +70°C)
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). This parameter is guaranteed by device characteriza-
tion, but is not production tested.
2. The Pipelined output parameters (tCYC2, tCD2) apply to either or both the Left and Right ports when
FT/PIPE = VIH. Flow-through parameters (tCYC1, tCD1) apply
when
FT/PIPE = VIL for that port.
3. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (
OE), FT/PIPER, and FT/PIPEL.
4. Industrial temperature: for specific speeds, packages and powers contact your sales office.
70V9379L7
Com'l Only
70V9379L9
Com'l Only
70V9379L12
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tCYC1
Clock Cycle Time (Flow-Through)(2)
22
____
25
____
30
____
ns
tCYC2
Clock Cycle Time (Pipelined)(2)
12
____
15
____
20
____
ns
tCH1
Clock High Time (Flow-Through)(2)
7.5
____
12
____
12
____
ns
tCL1
Clock Low Time (Flow-Through)(2)
7.5
____
12
____
12
____
ns
tCH2
Clock High Time (Pipelined)(2)
5
____
6
____
8
____
ns
tCL2
Clock Low Time (Pipelined)(2)
5
____
6
____
8
____
ns
tR
Clock Rise Time
____
3
____
3
____
3ns
tF
Clock Fall Time
____
3
____
3
____
3ns
tSA
Address Setup Time
4
____
4
____
4
____
ns
tHA
Address Hold Time
0
____
1
____
1
____
ns
tSC
Chip Enable Setup Time
4
____
4
____
4
____
ns
tHC
Chip Enable Hold Time
0
____
1
____
1
____
ns
tSW
R/W Setup Time
4
____
4
____
4
____
ns
tHW
R/W Hold Time
0
____
1
____
1
____
ns
tSD
Input Data Setup Time
4
____
4
____
4
____
ns
tHD
Input Data Hold Time
0
____
1
____
1
____
ns
tSAD
ADS Setup Time
4
____
4
____
4
____
ns
tHAD
ADS Hold Time
0
____
1
____
1
____
ns
tSCN
CNTEN Setup Time
4
____
4
____
4
____
ns
tHCN
CNTEN Hold Time
0
____
1
____
1
____
ns
tSRST
CNTRST Setup Time
4
____
4
____
4
____
ns
tHRST
CNTRST Hold Time
0
____
1
____
1
____
ns
tOE
Output Enable to Data Valid
____
9
____
12
____
12
ns
tOLZ
Output Enable to Output Low-Z(1)
2
____
2
____
2
____
ns
tOHZ
Output Enable to Output High-Z(1)
17
ns
tCD1
Clock to Data Valid (Flow-Through)(2)
____
18
____
20
____
25
ns
tCD2
Clock to Data Valid (Pipelined)(2)
____
7.5
____
9
____
12
ns
tDC
Data Output Hold After Clock High
2
____
2
____
2
____
ns
tCKHZ
Clock High to Output High-Z(1)
29
ns
tCKLZ
Clock High to Output Low-Z(1)
2
____
2
____
2
____
ns
Port-to-Port Delay
tCWDD
Write Port Clock High to Read Data Delay
____
28
____
35
____
40
ns
tCCS
Clock-to-Clock Setup Time
____
10
____
15
____
15
ns
4857 tbl 11
相關(guān)PDF資料
PDF描述
IDT709389L9PF x18 Dual-Port SRAM
IDT70M74S25G Quad-Port SRAM Module
IDT70M74S30G Quad-Port SRAM Module
IDT70M74S30GB Quad-Port SRAM Module
IDT70M74S35G Quad-Port SRAM Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT709389L7PF8 功能描述:IC SRAM 1.125MBIT 7NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT709389L9PF 功能描述:IC SRAM 1.125MBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT709389L9PF8 功能描述:IC SRAM 1.125MBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT709389L9PFI 功能描述:IC SRAM 1.125MBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT709389L9PFI8 功能描述:IC SRAM 1.125MBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ