參數(shù)資料
型號: IDT709289L12PF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
中文描述: 64K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
封裝: 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100
文件頁數(shù): 4/15頁
文件大?。?/td> 190K
代理商: IDT709289L12PF
6.42
IDT709289L
High-Speed 64K x 16 Synchronous Pipelined Dual-Port Static RAM Industrial and Commercial Temperature Ranges
))-#
$#).##/0
Grade
"
))-#
)
Symbol
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
cc
+ 10% for more than 25% of the cycle time or 10ns
maximum and is limted to < 20mA for the period of V
TERM
> V
cc
+ 10%.
&12
"
NOTES:
1. These parameters are determned by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch from
0V to 3V or from3V to 0V.
3. C
OUT
also references C
I/O
.
#
$
"
3456 3718
9
"
NOTES:
1. Industrial temperature: for other speeds, packages and powers contact your sales
office.
2. This is the parameter T
A
. This is the "instant on" case temperature.
NOTES:
1. V
TERM
must not exceed V
cc
+ 10%.
2. V
IL
> -1.5V for pulse width less than 10ns.
Ambient
Temperature
(2)
GND
Vcc
Commercial
0
O
C to +70
O
C
0V
5.0V
+
10%
Industrial
-40
O
C to +85
O
C
0V
5.0V
+
10%
4842 tbl 04
Parameter
Mn.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
____
6.0
(1)
V
V
IL
Input Low Voltage
-0.5
(2)
____
0.8
V
4842 tbl 05
Symbol
Parameter
Conditions
(2)
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
9
pF
C
OUT
(3)
Output Capacitance
V
OUT
= 3dV
10
pF
4842 tbl 07
Symbol
Rating
Commercial
& Industrial
Unit
V
TERM
(2)
Termnal Voltage
wth Respect
to GND
-0.5 to +7.0
V
T
BIAS
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-65 to +150
o
C
I
OUT
DC Output
Current
50
mA
4842 tbl 06
NOTES:
1. "H" = V
IH,
"L" = V
IL,
"X" = Don't Care.
2.
CE
0
,
LB
,
UB
, and
OE
= V
IL
; CE
1
and R/
W
= V
IH
.
3. Outputs configured in Flow-Through Output mode: if outputs are in Pipelined mode the data out will be delayed by one cycle.
4.
ADS
is independent of all other signals including
CE
0
, CE
1
,
UB
and
LB
.
5. The address counter advances if
CNTEN
= V
IL
on the rising edge of CLK, regardless of all other signals including
CE
0
, CE
1
,
UB
and
LB
.
6. While an external address is being loaded (
ADS
= V
IL
), R/
W
= V
IH
is recommended to ensure data is not written arbitrarily.
$%$&''())
:"
Address
Previous
Address
Addr
Used
CLK
ADS
CNTEN
CNTRST
I/O
(3)
Mode
X
X
0
X
X
L
D
I/O
(0)
Counter Reset to Address 0
An
X
An
L
(4)
X
H
D
I/O
(n)
External Address Loaded into Counter
An
Ap
Ap
H
H
H
D
I/O
(p)
External Address Blocked
Counter Disabled (Ap reused)
X
Ap
Ap + 1
H
L
(5)
H
D
I/O
(p+1)
Counter Enable
Internal Address Generation
4842 tbl 03
相關PDF資料
PDF描述
IDT709289L12PFI HIGH-SPEED 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT709289L7PF HIGH-SPEED 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT709289L7PFI HIGH-SPEED 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT709289L9PF HIGH-SPEED 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT709289L9PFI HIGH-SPEED 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
相關代理商/技術參數(shù)
參數(shù)描述
IDT709289L12PF8 功能描述:IC SRAM 1MBIT 12NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT709289L7PF 功能描述:IC SRAM 1MBIT 7NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT709289L7PF8 功能描述:IC SRAM 1MBIT 7NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT709289L9PF 功能描述:IC SRAM 1MBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT709289L9PF8 功能描述:IC SRAM 1MBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8