- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377272 > IDT70825S20GB (Integrated Device Technology, Inc.) Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SOIC 0 to 70 PDF資料下載
參數(shù)資料
| 型號(hào)： | IDT70825S20GB |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SOIC 0 to 70 |
| 中文描述： | 高速8K的× 16順序訪問隨機(jī)存取存儲(chǔ)器（單存取RAM⑩） |
| 文件頁數(shù)： | 4/21頁 |
| 文件大?。?/td> | 319K |
| 代理商： | IDT70825S20GB |
6.31
4
IDT70825S/L
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY
MILITARY AND COMMERCIAL TEMPERATURE RANGES
CAPACITANCE
(1)
(T
A
= +25
°
C, F = 1.0MHz)TQFP ONLY
Symbol
Parameter
C
IN
Input Capacitance
C
OUT
Output
Capacitance
Conditions
(2)
V
IN
= 3dV
V
OUT
= 3dV
Max.
9
10
Unit
pF
pF
NOTES:
1. This parameter is determined by device characterization, but is not
production tested.
2
.
3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
3016 tbl 06
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
V
CC
Supply Voltage
GND
Supply Voltage
V
IH
Input High Voltage
V
IL
Input Low Voltage
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
—
—
Max.
5.5
0
6.0
(2)
0.8
Unit
V
V
V
V
NOTES:
1. V
IL
> –1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
3016 tbl 05
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
Rating
Commercial
Military
–0.5 to +7.0
Unit
V
Terminal Voltage –0.5 to +7.0
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
T
A
0 to +70
–55 to +125
°
C
T
BIAS
–55 to +125
–65 to +135
°
C
T
STG
–55 to +125
–65 to +150
°
C
I
OUT
50
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. V
TERM
must not exceed Vcc + 0.5V for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20mA for the period of V
TERM
>
Vcc
+ 0.5V.
3016 tbl 03
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade
Temperature
Military
–55
°
C to +125
°
C
Commercial
0
°
C to +70
°
C
GND
0V
0V
VCC
5.0V
±
10%
5.0V
±
10%
3016 tbl 04
DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE
AND SUPPLY VOLTAGE RANGE (V
CC
= 5.0V
±
10%)
IDT70825S
Min.
—
—
IDT70825L
Min.
—
—
Symbol
|I
LI
|
|I
LO
|
Parameter
Test Conditions
Max.
5.0
5.0
Max.
1.0
1.0
Unit
μ
A
μ
A
Input Leakage Current
(1)
Output Leakage Current
V
CC
= Max. V
IN
= GND to V
CC
V
CC
= Max.
CE
and
SCE
= V
IH
V
OUT
= GND to V
CC
I
OL
= 4mA, V
CC
= Min.
I
OH
= –4mA, V
CC
= Min.
V
OL
V
OH
Output Low Voltage
Output High Voltage
—
2.4
0.4
—
—
2.4
0.4
—
V
V
3016 tbl 07
NOTE:
1. At Vcc
≤
2.0V input leakages are undefined.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT70825S20PF | Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SOIC 0 to 70 |
| IDT70825S20PFB | Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SOIC 0 to 70 |
| IDT70825S25G | Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SOIC 0 to 70 |
| IDT70825S25GB | Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SOIC 0 to 70 |
| IDT70825S25PF | Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SOIC 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70825S20PF | 功能描述:IC SARAM 128KBIT 20NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70825S20PF8 | 功能描述:IC SARAM 128KBIT 20NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70825S25G | 功能描述:IC SARAM 128KBIT 25NS 84PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70825S25PF | 功能描述:IC SARAM 128KBIT 25NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| IDT70825S25PF8 | 功能描述:IC SARAM 128KBIT 25NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。