參數(shù)資料
型號(hào): IDT70825L25PF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: High Speed Low-Noise JFET-Input Dual Operational Amplifier 20-LCCC -55 to 125
中文描述: 8K X 16 STANDARD SRAM, 25 ns, PQFP80
封裝: TQFP-80
文件頁(yè)數(shù): 8/21頁(yè)
文件大小: 319K
代理商: IDT70825L25PF
6.31
8
IDT70825S/L
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TRUTH TABLE IV – SEQUENTIAL ADDRESS POINTER OPERATIONS
(1,2,3,4,5)
Inputs/Outputs
SLD SSTRT
1
H
L
H
H
L
H
SCLK
SSTRT
2
H
L
H
SOE
MODE
X
X
Start address for Buffer #1 loaded into Address Pointer.
Start address for Buffer #2 loaded into Address Pointer.
Data on SI/O
0
-SI/O
12
loaded into Address Pointer.
H
(6)
NOTES:
1. H = V
IH
, L = V
IL
, X = Don't Care, and High-Z = High-impedance.
2.
RST
is continuously HIGH. The conditions of
SCE
,
CNTEN
, and SR/
W
are unrelated to the sequential address pointer operations.
3.
CE
,
OE
, R/
W
,
LB
,
UB
, and I/O
0
-I/O
15
are unrelated to the sequential port control and operation, except for
CMD
which must not be used concurrently with
the sequential port operation (due to the counter and register control).
CMD
should be HIGH (CMD = V
IH
) during sequential port access.
4. Address pointer can also change when it reaches an end of buffer address. See Flow Control Bits table.
5. When
SLD
is sampled LOW, there is an internal delay of one cycle before the address pointer changes. The state of
CNTEN
is ignored and the address
is not incremented during the two cycles.
6.
SOE
may be LOW with
SCE
deselect or in the write mode using SR/
W
.
3016 tbl 14
ADDRESS POINTER LOAD CONTROL (SLD)
In
SLD
mode, there is an internal delay of one cycle before
the address pointer changes in the cycle following
SLD
. When
SLD
is LOW, data on the inputs SI/O
0
-SI/O
12
is loaded into a
data-in register on the LOW-to-HIGH transition of
SCLK
. On
the cycle following
SLD
, the address pointer changes to the
address location contained in the data-in register.
SSTRT
1
,
SSTRT
2
may not be low while
SLD
is LOW, or during the cycle
following
SLD
. The
SSTRT
1
and
SSTRT
2
require only one
clock cycle, since these addresses are pre-loaded in the
registers already.
NOTE:
1. At SCLK edge (A), SI/O
0
-SI/O
12
data is loaded into a data-in register. At edge (B), contents of the data-in register are loaded into the address pointer (i.e.
address pointer changes). At SCLK edge (A),
SSTRT
1
and
SSTRT
2
must be high to ensure for proper sequential address pointer loading. At SCLK edge
(B),
SLD
and
SSTRT
1,2
must be high to ensure for proper sequential address pointer loading. For
SSTRT
1
or
SSTRT
2
, the data to be read will be ready
for edge (B), while data will not be ready at edge (B) when
SLD
is used, but will be ready at edge (C).
SEQUENTIAL LOAD OF ADDRESS INTO POINTER/COUNTER
(1)
15
H
H
MSB
LSB SI/O BITS
3016 drw 09
H
H
12 ------------------------------------------------------------------------------------------------------------
Address Loaded into Pointer
0
14
13
NOTE:
1. "H" = V
IH
for the SI/O intput state.
SLD
SCLK
SI/O
0-11
SSTRT
1,2
A
B
ADDR
IN
3016 drw 08
C
DATA
OUT
(1)
SLD
MODE
(1)
相關(guān)PDF資料
PDF描述
IDT70825L25PFB High Speed Low-Noise JFET-Input Dual Operational Amplifier 8-CDIP -55 to 125
IDT70825S High Speed Low-Noise JFET-Input Dual Operational Amplifier 8-CDIP -55 to 125
IDT70825S20G High Speed Low-Noise JFET-Input Dual Operational Amplifier 10-CFP -55 to 125
IDT70825S20GB Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SOIC 0 to 70
IDT70825S20PF Quad Low-Noise JFET-Input General-Purpose Operational Amplifier 14-SOIC 0 to 70
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70825L25PF8 功能描述:IC SARAM 128KBIT 25NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT70825L35G 功能描述:IC SARAM 128KBIT 35NS 84PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT70825L35PF 功能描述:IC SARAM 128KBIT 35NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT70825L35PF8 功能描述:IC SARAM 128KBIT 35NS 80TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
IDT70825S20G 功能描述:IC SARAM 128KBIT 20NS 84PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ