參數(shù)資料
型號: IDT7025S35FB
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: 150V N-Channel UltraFET Trench MOSFET; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel
中文描述: 8K X 16 DUAL-PORT SRAM, 35 ns, QFP84
封裝: FP-84
文件頁數(shù): 13/20頁
文件大?。?/td> 294K
代理商: IDT7025S35FB
IDT7025S/L
HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.16
13
TIMING WAVEFORM OF WRITE PORT-TO-PORT READ AND
BUSY
(M/
S
= V
IH
)
(2,4,5)
2683 drw 13
t
DW
t
APS
ADDR
"A"
t
WC
DATA
OUT "B"
MATCH
t
WP
R/
W
"A"
DATA
IN "A"
ADDR
"B"
t
DH
VALID
(1)
MATCH
BUSY
"B"
t
BDA
VALID
t
BDD
t
DDD(3)
t
WDD
t
BAA
TIMING WAVEFORM OF WRITE WITH
BUSY
NOTES:
1. t
WH
must be met for both
BUSY
input (slave) output master.
2. Busy is asserted on port "B" Blocking R/
W
"B"
, until
BUSY
"B"
goes High.
3. t
WB
is only for the 'Slave' Version
.
NOTES:
1. To ensure that the earlier of the two ports wins. t
APS
is ignored for M/
S
= V
IL
(slave).
2.
CE
L
=
CE
R
= V
IL
.
3.
OE
= V
IL
for the reading port.
4. If M/
S
= V
IL
(slave),
BUSY
is an input. Then for this example
BUSY
"A"
= V
IH
and
BUSY
"B"
input is shown above.
5. All timing is the same for left and right ports. Port "A" may be either the left of right port. Port "B" is the opposite Port from Port "A".
2683 drw 14
R/
W
"A"
BUSY
"B"
t
WP
t
WB
R/
W
"B"
t
WH
(2)
(3)
(1)
相關(guān)PDF資料
PDF描述
IDT7025S35G 150V N-Channel UltraFET Trench MOSFET
IDT7025S35GB HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
IDT7025S35J HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
IDT7025S35JB HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
IDT7025S35PF 200V N-Channel PowerTrench MOSFET; ; No of Pins: 2; Container: Tape & Reel
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7025S35G 功能描述:IC SRAM 128KBIT 35NS 84PGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
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IDT7025S35JG 制造商:Integrated Device Technology Inc 功能描述: