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參數(shù)資料
| 型號(hào)： | IDT7016S17J |
| 英文描述： | x9 Dual-Port SRAM |
| 中文描述： | X9熱賣雙端口SRAM |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 190K |
| 代理商： | IDT7016S17J |
6.42
IDT70V9379L
High-Speed 32K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
4
Recommended Operating
Temperature and Supply Voltage(1)
Recommended DC Operating
Conditions
Absolute Maximum Ratings(1)
NOTES:
1.
These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
Capacitance(1)
(TA = +25°C, f = 1.0MHZ)
Truth Table IIAddress Counter Control(1,2,6)
NOTES:
1. "H" = VIH, "L" = VIL, "X" = Don't Care.
2.
CE0, LB, UB, and OE = VIL; CE1 and R/W = VIH.
3. Outputs configured in Flow-Through Output mode; if outputs are in Pipelined mode the data out will be delayed by one cycle.
4.
ADS is independent of all other signals including CE0, CE1, UB and LB.
5. The address counter advances if
CNTEN = VIL on the rising edge of CLK, regardless of all other signals including CE0, CE1, UB and LB.
6. While an external address is being loaded (
ADS = VIL), R/W = VIH is recommended to ensure data is not written arbitrarily.
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VCC +0.3V.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VCC +0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > VCC + 0.3V.
NOTES:
1. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
2. This is the parameter TA. This is the "instant on" case temperature.
Address
Previous
Address
Addr
Used
CLK
ADS
CNTEN
CNTRST
I/O(3)
MODE
XX
0
↑
XX
L
DI/O(0)
Counte r Reset to Address 0
An
X
An
↑
L
(4)
XH
DI/O(n)
External Address Loaded into Counter
An
Ap
↑
HH
HDI/O(p)
External Address Blocked—Counter disabled (Ap reused)
XAp
Ap + 1
↑
H
L(5)
HDI/O(p+1)
Counter Enabled—Internal Address generation
4857 tbl 03
Grade
Ambient
Temperature
(2)
GND
Vcc
Commercial
0OC to +70OC0V
3.3V
+ 0.3V
Industrial
-40OC to +85OC0V
3.3V
+ 0.3V
4857 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
3.0
3.3
3.6
V
GND
Ground
0
V
VIH
Input High Voltage
2.0V
____
VCC+0.3V(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
4857 tbl 05
Symbol
Rating
Commercial
& Industrial
Unit
VTERM(2)
Terminal Voltage
with Respect to
GND
-0.5 to +4.6
V
TBIAS
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-55 to +150
oC
IOUT
DC Output Current
50
mA
4857 tbl 06
Symbol
Parameter
Conditions
(2)
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
9
pF
COUT
(3)
Output Capacitance
VOUT = 3dV
10
pF
4857 tbl 07
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| IDT7016S20GG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
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