參數(shù)資料
型號(hào): IDT7016S12G
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類(lèi): DRAM
英文描述: Low-Power JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125
中文描述: 16K X 9 DUAL-PORT SRAM, 12 ns, CPGA68
封裝: CERAMIC, PGA-68
文件頁(yè)數(shù): 8/20頁(yè)
文件大?。?/td> 262K
代理商: IDT7016S12G
6.13
8
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
WAVEFORM OF READ CYCLES
(5)
NOTES:
1. Timing depends on which signal is asserted last,
OE
or
CE
.
2. Timing depends on which signal is de-asserted first,
CE
or
OE.
3. t
BDD
delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations
BUSY
has no relation to valid output data.
4. Start of valid data depends on which timing becomes effective last : t
AOE
, t
ACE
, t
AA,
or t
BDD
.
5.
SEM
= V
IH
.
t
RC
R/
W
CE
ADDR
t
AA
t
ACE(4)
OE
3190 drw 07
(4)
t
AOE(4)
(1)
t
LZ
t
OH
(2)
t
HZ
(3, 4)
t
BDD
DATA
OUT
BUSY
OUT
VALID DATA
(4)
TIMING OF POWER-UP / POWER-DOWN
CE
3190 drw 08
t
PU
I
CC
I
SB
t
PD
50%
50%
相關(guān)PDF資料
PDF描述
IDT7016S12GB Low-Power JFET-Input Quad Operational Amplifier 14-CFP -55 to 125
IDT7016S12J Low-Power JFET-Input Quad Operational Amplifier 20-LCCC -55 to 125
IDT7016S12JB Low-Power JFET-Input Quad Operational Amplifier 20-LCCC -55 to 125
IDT7016S12PF Low-Power JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125
IDT7016S12PFB Low-Power JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7016S12GB 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
IDT7016S12GG 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016S12GGB 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016S12GGI 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM
IDT7016S12J 功能描述:IC SRAM 144KBIT 12NS 68PLCC RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱(chēng):70V3579S5BCI8