參數(shù)資料
型號: IDT7015S20JI
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM
中文描述: 8K X 9 DUAL-PORT SRAM, 20 ns, PQCC68
封裝: PLASTIC, LCC-68
文件頁數(shù): 5/20頁
文件大?。?/td> 178K
代理商: IDT7015S20JI
6.42
IDT7015S/L
High-Speed 8K x 9 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
Capacitance
(1)
(T
A
= +25°C, f = 1.0mhz, for T QFP Pac kage)
Conditions
(2)
Max.
Unit
5
APRIL 04, 2006
DC Elec tric al Charac teristic s Over the Operating
Temperature and S upply Voltage R ange
(V
CC
= 5.0V ± 10%)
NOTE:
1.
At Vcc < 2.0V, Input leakages are undefined.
NOTES:
1.
This parameter is determined by device characteristics but is not
production tested.
2. 3dV references the interpolated capacitance when the input and
output signals switch from 0V to 3V or from 3V to 0V .
Output Loads and
AC Test Conditions
Figure 1. AC Output Test Load
Figure 2. Output Test Load
(For t
LZ
, t
HZ
, t
WZ
, t
OW
)
*Including scope and jig.
2954 drw 06
893
30pF
347
5V
DATA
OUT
BUSY
INT
893
5pF
347
5V
DATA
OUT
*
2954 drw 05
Symbol
Parameter
C
IN
Input Capacitance
V
IN
= 3dV
9
pF
C
OUT
Output Capacitance
V
OUT
= 3dV
10
pF
2954 tbl 07
Symbol
Parameter
Test Conditions
7015S
7015L
Unit
Mn.
Max.
Mn.
Max.
|
LI
|
Input Leakage Current
(1)
V
CC
= 5.5V, V
IN
= 0V to V
CC
___
10
___
5
μA
|
LO
|
Output Leakage Current
CE
= V
IH
, V
OUT
= 0V to V
CC
___
10
___
5
μA
V
OL
Output Low Voltage
I
OL
= +4mA
___
0.4
___
0.4
V
V
OH
Output High Voltage
I
OH
= -4mA
2.4
___
2.4
___
V
2954 tbl 08
Input Pulse Levels
Input Rise/Fall Times
(1)
Input Timng Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns Max.
1.5V
1.5V
Figures 1 and 2
2954 tbl 09
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