參數(shù)資料
型號(hào): IDT7012L35C
英文描述: x9 Dual-Port SRAM
中文描述: X9熱賣雙端口SRAM
文件頁數(shù): 5/15頁
文件大小: 190K
代理商: IDT7012L35C
6.42
IDT70V9379L
High-Speed 32K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
13
ADDRESS
(4)
An
D0
tCH2
tCL2
tCYC2
Q0
Q1
0
CLK
DATAIN
R/W
CNTRST
4857 drw 17
INTERNAL
(3)
ADDRESS
ADS
CNTEN
tSRST tHRST
tSD
tHD
tSW tHW
COUNTER
RESET
WRITE
ADDRESS 0
READ
ADDRESS 0
READ
ADDRESS 1
READ
ADDRESS n
Qn
An + 1
An + 2
READ
ADDRESS n+1
DATAOUT
(5)
tSA tHA
1
An
An + 1
(6)
Ax
tSAD tHAD
tSCN tHCN
(6)
Timing Waveform of Write with Address Counter Advance
(Flow-Through or Pipelined Outputs)(1)
Timing Waveform of Counter Reset (Pipelined Outputs)(2)
ADDRESS
An
CLK
DATAIN
Dn
Dn + 1
Dn + 2
ADS
CNTEN
(7)
tCH2
tCL2
tCYC2
4857 drw 16
INTERNAL
(3)
ADDRESS
An
(7)
An + 1
An + 2
An + 3
An + 4
Dn + 3
Dn + 4
tSA
tHA
tSAD tHAD
WRITE
COUNTER HOLD
WRITE WITH COUNTER
WRITE
EXTERNAL
ADDRESS
WRITE
WITH COUNTER
tSD tHD
NOTES:
1.
CE0, UB, LB, and R/W = VIL; CE1 and CNTRST = VIH.
2. CE0, UB, LB = VIL; CE1 = VIH.
3. The "Internal Address" is equal to the "External Address" when
ADS = VIL and equals the counter output when ADS = VIH.
4. Addresses do not have to be accessed sequentially since
ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only.
5. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
6. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset cycle. ADDR0 will be accessed. Extra cycles
are shown here simply for clarification.
7.
CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance.
The ‘An +1’ Address is written to during this cycle.
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