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參數(shù)資料
| 型號： | IDT70121S45L52B |
| 英文描述： | x9 Dual-Port SRAM |
| 中文描述： | X9熱賣雙端口SRAM |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 190K |
| 代理商： | IDT70121S45L52B |
6.42
IDT70V9379L
High-Speed 32K x 18 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
11
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(3)
Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)(3)
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
3.
CE0, UB, LB, and ADS = VIL; CE1, CNTEN, and CNTRST = VIH. "NOP" is "No Operation".
4. Addresses do not have to be accessed sequentially since
ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for
reference use only.
5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
R/W
ADDRESS
An
An +1
An + 2
An + 3
An + 4
DATAIN
Dn + 2
CE0
CLK
4857 drw 12
Qn
DATAOUT
CE1
UB, LB
tCD1
Qn + 1
tCH1
tCL1
tCYC1
tSD tHD
tCD1
tDC
tCKHZ
Qn + 3
tCD1
tDC
tSC
tHC
tSB
tHB
tSW tHW
tSA
tHA
READ
NOP
READ
tCKLZ
(4)
(2)
(1)
tSW tHW
WRITE
(5)
R/W
ADDRESS
An
An +1
An + 2
An + 3
An + 4
An + 5
(4)
DATAIN
Dn + 2
CE0
CLK
4857 drw 13
Qn
DATAOUT
CE1
UB, LB
tCD1
tCH1
tCL1
tCYC1
tSD tHD
tCD1
tDC
Qn + 4
tCD1
tDC
tSC
tHC
tSB
tHB
tSW tHW
tSA
tHA
READ
WRITE
READ
tCKLZ
(2)
Dn + 3
tOHZ
(1)
tSW tHW
OE
tOE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70121S55J | 功能描述:IC SRAM 18KBIT 55NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT70121S55J8 | 功能描述:IC SRAM 18KBIT 55NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT70121S55JG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121S55JGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121S55L52 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM |
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