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參數(shù)資料
| 型號： | IDT7008S55PFI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | ACB 17C 17#1 PIN RECP WALL RM |
| 中文描述： | 64K X 8 DUAL-PORT SRAM, 55 ns, PQFP100 |
| 封裝： | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 |
| 文件頁數(shù)： | 9/19頁 |
| 文件大?。?/td> | 167K |
| 代理商： | IDT7008S55PFI |
6.42
IDT7008S/L
High-Speed 64K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
)%68%
6$,/79
=>
NOTES:
1. Transition is measured 0mV fromLow- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranted by device characterization, but is not production tested.
3. To access RAM
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. Either condition must be valid for the entire t
EW
time.
4. To access RAM
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
.
5. The specification for t
DH
must be met by the device supplying write data to the RAMunder all operating conditions. Although t
DH
and t
OW
values will vary over voltage
and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
6. 'X' in part numbers indicates power rating (s or L).
7. Industrial Temperature: for other speeds, packages and powers contact your sales office.
)%68%
6$,/79+
=>
7008X20
Com'l Only
7008X25 Com'l
& Military
7008X35 Com'l
& Military
7008X55
Com'l, Ind
& Military
Unit
Symbol
Parameter
Mn.
Max.
Mn.
Max.
Mn.
Max.
Mn.
Max.
READ CYCLE
t
RC
Read Cycle Time
20
____
25
____
35
____
55
____
ns
t
AA
Address Access Time
____
20
____
25
____
35
____
55
ns
t
ACE
Chip Enable Access Time
(4)
____
20
____
25
____
35
____
55
ns
t
AOE
Output Enable Access Time
____
12
____
13
____
20
____
30
ns
t
OH
Output Hold fromAddress Change
3
____
3
____
3
____
3
____
ns
t
LZ
Output Low-Z Time
(1,2)
3
____
3
____
3
____
3
____
ns
t
HZ
Output High-Z Time
(1,2)
____
12
____
15
____
15
____
25
ns
t
PU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(2)
____
20
____
25
____
35
____
ns
t
SOP
Semaphore Flag Update Pulse (
OE
or
SEM
)
10
____
12
____
15
____
15
____
ns
t
SAA
Semaphore Address Access Time
____
20
____
25
____
35
____
55
ns
3198 tbl 12
Symbol
Parameter
7008X20
Com'l Only
7008X25
Com'l &
Mlitary
7008X35
Com'l &
7008X55
Com'l, Ind
& Military
Unit
Mn.
Max.
Mn.
Max.
Mn.
Max.
Mn.
Max.
WRITE CYCLE
t
WC
Write Cycle Time
20
____
25
____
35
____
55
____
ns
t
EW
Chip Enable to End-of-Write
(3)
15
____
20
____
30
____
45
____
ns
t
AW
Address Valid to End-of-Write
15
____
20
____
30
____
45
____
ns
t
AS
Address Set-up Time
(3)
0
____
0
____
0
____
0
____
ns
t
WP
Write Pulse Width
15
____
20
____
25
____
40
____
ns
t
WR
Write Recovery Time
0
____
0
____
0
____
0
____
ns
t
DW
Data Valid to End-of-Write
15
____
15
____
15
____
30
____
ns
t
HZ
Output High-Z Time
(1,2)
____
12
____
15
____
15
____
25
ns
t
DH
Data Hold Time
(5)
0
____
0
____
0
____
0
____
ns
t
WZ
Write Enable to Output in High-Z
(1,2)
____
12
____
15
____
15
____
25
ns
t
OW
Output Active fromEnd-of-Write
(1,2,5)
0
____
0
____
0
____
0
____
ns
t
SWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
5
____
ns
t
SPS
SEM Flag Contention Window
5
____
5
____
5
____
5
____
ns
3198 tbl 13
相關(guān)PDF資料 |
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|---|---|
| IDT7008L20PF | HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
| IDT7008L20PFB | HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
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