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參數(shù)資料
| 型號： | IDT7008L35PFB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 64K X 8 DUAL-PORT SRAM, 35 ns, PQFP100 |
| 封裝： | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100 |
| 文件頁數(shù)： | 13/19頁 |
| 文件大小： | 167K |
| 代理商： | IDT7008L35PFB |
6.42
IDT7008S/L
High-Speed 64K x 8 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
3198 drw 13
t
DW
t
APS
ADDR
"A"
t
WC
DATA
OUT "B"
MATCH
t
WP
R/
W
"A"
DATA
IN "A"
ADDR
"B"
t
DH
VALID
(1)
MATCH
BUSY
"B"
t
BDA
VALID
t
BDD
t
DDD
(3)
t
WDD
$.8.%**+,,
BUSY
2
-
S
09
'C
B
$.8.%
BUSY
-
S
09
'D
NOTES:
1. To ensure that the earlier of the two ports wins. t
APS
is ignored for M/
S
= V
IL
(SLAVE).
2.
CE
L
=
CE
R
= V
IL,
refer to Chip Enable Truth Table.
3.
OE
= V
IL
for the reading port.
4. If M/
S
= V
IL
(SLAVE), then
BUSY
is an input (
BUSY
"A"
= V
IH
and
BUSY
"B"
= "don't care", for this example).
5. All timng is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite fromport "A".
NOTES:
1. t
WH
must be met for both
BUSY
input (SLAVE) and output (MASTER).
2.
BUSY
is asserted on port "B" blocking R/W
"B"
, until
BUSY
"B"
goes HIGH.
3. t
WB
is only for the 'Slave' version.
3198 drw 14
R/
W
"A"
BUSY
"B"
t
WP
t
WB
(3)
R/
W
"B"
t
WH
(1)
(2)
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| IDT7008L25GB | HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7008L35PFI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
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| IDT7008L55GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
| IDT7008L55GI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
| IDT7008L55J | 功能描述:IC SRAM 512KBIT 55NS 84PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
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