參數(shù)資料
型號： IDT7006S70JB
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
中文描述： 16K X 8 DUAL-PORT SRAM, 70 ns, PQCC68
封裝： 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-68
文件頁數(shù)： 5/20頁
文件大?。?/td> 263K
代理商： IDT7006S70JB
IDT7006S/L
HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.07
5
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
IDT7006S
Min.
—
IDT7006L
Min.
—
Symbol
|I
LI
|
Parameter
Test Conditions
V
CC
= 5.5V, V
IN
= 0V to V
CC
Max.
10
Max.
5
Unit
μ
A
μ
A
V
V
Input Leakage Current
(1)
|I
LO
|
V
OL
V
OH
Output Leakage Current
Output Low Voltage
Output High Voltage
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= -4mA
—
—
2.4
10
0.4
—
—
—
2.4
5
0.4
—
2739 tbl 08
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
(V
CC
= 5.0V
±
10%)
7006X15
Com'l. Only
7006X17
Com'l. Only
7006X20
7006X25
Test
Condition
Version
Typ.
(2)
CE
= V
IL
, Outputs Open
SEM
= V
IH
f = f
MAX(3)
Symbol
I
CC
Parameter
Max.
Typ.
(2)
Max.
—
—
—
—
310
170
260
160
—
—
—
—
60
20
50
10
—
—
—
—
190
105
160
95
—
—
—
—
15
1.0
5
0.2
Typ.
(2)
160
150
160
150
20
10
20
10
95
85
95
85
1.0
0.2
1.0
0.2
Max.
370
320
290
240
90
70
60
50
240
210
180
150
30
10
15
5
Typ.
(2)
Max.
Unit
155
340
145
280
155
265
145
220
16
80
10
65
16
60
10
50
90
215
80
180
90
170
80
140
1.0
30
0.2
10
1.0
15
0.2
Dynamic Operating
Current
(Both Ports Active)
MIL.
S
L
—
—
170
160
—
—
20
10
—
—
105
95
—
—
1.0
0.2
—
—
310
260
—
—
60
50
—
—
190
160
—
—
15
5
mA
COM.
S
L
I
SB1
Standby Current
(Both Ports — TTL
Level Inputs
CE
L
=
CE
R
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX(3)
MIL.
S
L
mA
COM.
S
L
I
SB2
Standby Current
(One Port — TTL
Level Inputs)
CE
"A"=
V
IL
and
CE
"B"=
V
IH(5)
Active Port Outputs Open
f = f
MAX(3)
SEM
R
=
SEM
L
> V
IH
MIL.
S
L
mA
COM.
S
L
I
SB3
Full Standby Current Both Ports
CE
L
and
(Both Ports — All
CMOS Level Inputs) V
IN
> V
CC
- 0.2V or
MIL.
S
L
mA
CE
R
> V
CC
- 0.2V
COM.
S
L
V
IN
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
-0.2V
5
I
SB4
Full Standby Current
CE
"A"
< 0.2V and
(One Port — All
CMOS Level Inputs)
SEM
R
=
SEM
L
> V
CC
-0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2v
Active Port Outputs Open,
f = f
MAX(3)
MIL.
S
—
—
—
—
90
225
85
200
mA
CE
"B"
> V
CC
- 0.2V
(5)
L
S
—
100
—
170
—
—
170
80
90
200
155
75
85
170
145
COM
.
100
L
90
140
90
140
80
130
75
120
NOTE:
1. At Vcc
≤
2.0V input leakages are undefined.
NOTES:
1. "X" in part numbers indicates power rating (S or L).
2. V
CC
= 5V, T
A
= +25
°
C, and are not production tested. I
CC DC
= 120mA (typ.).
3. At f = f
MAX
,
address and I/O'
S
are cycling at the maximum frequency read cycle of 1/t
RC
, and using “AC Test Conditions” of input levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A"may be either left or right port. Port "B" is the port opposite port "A".
2739 tbl 09
相關PDF資料
PDF描述
IDT7006S70PF HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006S70PFB HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006S15FB HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006L15FB HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006L25F HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
相關代理商/技術參數(shù)
參數(shù)描述
IDT7006S70L68B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM
IDT7006S70PF 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006S70PFB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006S70XLB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM
IDT7007L 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM
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