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參數(shù)資料
| 型號： | IDT7006S35GB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | High Efficiency Adaptive Charge pump 5V Boost; Package: WL-CSP; No of Pins: 8; Container: Tape & Reel |
| 中文描述： | 16K X 8 DUAL-PORT SRAM, 35 ns, CPGA68 |
| 封裝： | 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68 |
| 文件頁數(shù)： | 11/20頁 |
| 文件大?。?/td> | 263K |
| 代理商： | IDT7006S35GB |
IDT7006S/L
HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.07
11
TIMING WAVEFORM OF SEMAPHORE READ AFTER WRITE TIMING, EITHER SIDE
(1)
NOTES:
1.
CE
= V
IH
for the duration of the above timing (both write and read cycle).
2. "DATA
OUT
VALID" represents all I/O's (I/O
0
-I/O
7
) equal to the semaphore value.
NOTES:
1. D
OR
= D
OL
= V
IL
,
CE
R
=
CE
L
= V
IH
, Semaphore Flag is released from both sides (reads as ones from both sides) at cycle start.
2. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
3. This parameter is measured from R/
W
"A"
or
SEM
"A"
going High to R/
W
"B"
or
SEM
"B"
going High.
4. If t
SPS
is not satisfied, the semaphore will fall positively to one side or the other, but there is no guarantee which side will obtain the flag.
TIMING WAVEFORM OF SEMAPHORE WRITE CONTENTION
(1,3,4)
SEM
"A"
2739 drw 12
t
SPS
MATCH
R/
W
"A"
MATCH
A
0"A"
-A
2"A"
SIDE
“A”
(2)
SEM
"B"
R/
W
"B"
A
0"B"
-A
2"B"
SIDE
“B”
(2)
SEM
2739 drw 11
t
AW
t
EW
t
SOP
I/O
VALID ADDRESS
t
SAA
R/
W
t
WR
t
OH
t
ACE
VALID ADDRESS
DATA
IN
VALID
DATA
OUT
VALID
(2)
t
DW
t
WP
t
DH
t
AS
t
SWRD
t
AOE
Read Cycle
Write Cycle
A
0
-A
2
OE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7006S35J | 功能描述:IC SRAM 128KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7006S35J8 | 功能描述:IC SRAM 128KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7006S35JB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
| IDT7006S35L68 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM |
| IDT7006S35PF | 功能描述:IC SRAM 128KBIT 35NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
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