參數(shù)資料
型號(hào): IDT7006L70PFB
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
中文描述: 16K X 8 DUAL-PORT SRAM, 70 ns, PQFP64
封裝: 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64
文件頁(yè)數(shù): 7/20頁(yè)
文件大?。?/td> 263K
代理商: IDT7006L70PFB
IDT7006S/L
HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.07
7
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
5ns Max.
1.5V
1.5V
Figures 1 and 2
2739 tbl 12
IDT7006X35
IDT7006X55
IDT7006X70
Mil. Only
Min.
Symbol
READ CYCLE
t
RC
t
AA
t
ACE
t
AOE
t
OH
t
LZ
Parameter
Min.
Max.
Min.
Max.
Max.
Unit
Read Cycle Time
Address Access Time
Chip Enable Access Time
(3)
Output Enable Access Time
Output Hold from Address Change
Output Low-Z Time
(1, 2)
Output High-Z Time
(1, 2)
Chip Enable to Power Up Time
(2)
Chip Disable to Power Down Time
(2)
35
3
3
35
35
20
55
3
3
55
55
30
70
3
3
70
70
35
ns
ns
ns
ns
ns
ns
t
HZ
15
25
30
ns
t
PU
t
PD
0
35
0
50
0
50
ns
ns
t
SOP
Semaphore Flag Update Pulse (
OE
or
SEM
)
15
15
15
ns
t
SAA
Semaphore Address Access Time
35
55
70
ns
NOTES:
1. Transition is measured
±
500mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM,
CE
= V
IL
and
SEM
= V
IH.
To access semaphore,
CE
= V
IH and
SEM
= V
IL
.
4. "X" in part numbers indicates power rating (S or L).
2739 tbl 13
1250
30pF
775
DATA
OUT
BUSY
INT
5V
5V
1250
5pF
775
DATA
OUT
2739 drw 06
Figure 2. Output Load
(5pF for t
LZ
, t
HZ
, t
WZ
, t
OW
)
Including scope and jig.
Figure 1. AC Output Test Load
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(4)
IDT7006X15
Com'l. Only
Min. Max.
IDT7006X17
Com'l. Only
Min.
IDT7006X20
IDT7006X25
Symbol
READ CYCLE
t
RC
t
AA
Parameter
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
Address Access Time
Chip Enable Access Time
(3)
15 —
— 15
17
17
20
20
25
25
ns
ns
t
ACE
— 15
17
20
25
ns
t
AOE
t
OH
Output Enable Access Time
Output Hold from Address Change
Output Low-Z Time
(1, 2)
Output High-Z Time
(1, 2)
Chip Enable to Power Up Time
(2)
Chip Disable to Power Down Time
(2)
— 10
3
3
10
3
12
3
13
ns
ns
t
LZ
3 —
3
3
3
ns
t
HZ
t
PU
10
0
10
0
12
0
15
ns
ns
0
t
PD
15
17
20
25
ns
t
SOP
t
SAA
Semaphore Flag Update Pulse (
OE
or
SEM
) 10
Semaphore Address Access Time
10
17
10
20
10
25
ns
ns
15
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7006L70XLB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM
IDT7006S 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006S15F 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006S15FB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006S15G 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM