參數(shù)資料
型號(hào)： IDT7006L55PFB
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： 800mA 3MHz Digitally Programmable DC/DC converter; Package: MLP; No of Pins: 10; Container: Tape & Reel
中文描述： 16K X 8 DUAL-PORT SRAM, 55 ns, PQFP64
封裝： 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64
文件頁(yè)數(shù)： 9/20頁(yè)
文件大小： 263K
代理商： IDT7006L55PFB
IDT7006S/L
HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.07
9
IDT7006X15
Com'l. Only
Min.
IDT7006X17
Com'l. Only
Min.
IDT7006X20
IDT7006X25
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
Parameter
Max.
Max.
Min.
Max.
Min.
Max.
Unit
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
Write Enable to Output in High-Z
(1, 2)
Output Active from End-of-Write
(1, 2, 4)
15
12
12
0
12
0
10
—
—
—
—
—
—
—
—
10
17
12
12
0
12
0
10
—
—
—
—
—
—
—
—
10
20
15
15
0
15
0
15
—
—
—
—
—
—
—
—
12
25
20
20
0
20
0
15
—
—
—
—
—
—
—
—
15
ns
ns
ns
ns
ns
ns
ns
ns
t
DH
0
—
0
—
0
—
0
—
ns
t
WZ
t
OW
—
0
—
—
—
0
—
—
—
0
12
—
—
0
15
—
ns
ns
t
SWRD
SEM
Flag Write to Read Time
5
—
5
—
5
—
5
—
ns
t
SPS
SEM
Flag Contention Window
5
—
5
—
5
—
5
—
ns
IDT7006X35
IDT7006X55
IDT7006X70
Mil. Only
Min.
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
t
DH
Parameter
Min.
Max.
Min.
Max.
Max.
Unit
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
Write Enable to Output in High-Z
(1, 2)
Output Active from End-of-Write
(1, 2, 4)
SEM
Flag Write to Read Time
35
30
30
0
25
0
15
—
0
—
—
—
—
—
—
—
15
—
55
45
45
0
40
0
30
—
0
—
—
—
—
—
—
—
25
—
70
50
50
0
50
0
40
—
0
—
—
—
—
—
—
—
30
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WZ
—
15
—
25
—
30
ns
t
OW
t
SWRD
0
5
—
—
0
5
—
—
0
5
—
—
ns
ns
t
SPS
SEM
Flag Contention Window
5
—
5
—
5
—
ns
NOTES:
1. Transition is measured
±
500mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM,
CE
= V
IL
,
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. Either condition must be valid for the entire t
EW
time.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operating conditions. Although t
DH
and t
OW
values will vary
over voltage and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
5. "X" in part numbers indicates power rating (S or L).
2739 tbl 14
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(5)
相關(guān)PDF資料
PDF描述
IDT7006S 800mA 3MHz Digitally Programmable DC/DC converter; Package: WL-CSP; No of Pins: 12; Container: Tape & Reel
IDT7006S15F 800mA 3MHz Digitally Programmable DC/DC converter; Package: WL-CSP; No of Pins: 12; Container: Tape & Reel
IDT7006S15G 800mA 3MHz Digitally Programmable DC/DC converter; Package: WL-CSP; No of Pins: 12; Container: Tape & Reel
IDT7006L HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
IDT7006L15F HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7006L55PFI 功能描述:IC SRAM 128KBIT 55NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，異步 存儲(chǔ)容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF
IDT7006L55PFI8 功能描述:IC SRAM 128KBIT 55NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，異步 存儲(chǔ)容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF
IDT7006L55XL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM
IDT7006L55XLB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM
IDT7006L70F 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
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