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參數(shù)資料
| 型號： | IDT7005S70PF |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 高速8K的× 8雙端口靜態(tài)RAM |
| 文件頁數(shù)： | 20/20頁 |
| 文件大小： | 265K |
| 代理商： | IDT7005S70PF |
IDT7005S/L
HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.06
9
IDT7005X15
IDT7005X17
IDT7005X20
IDT7005X25
Com'l. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
15
—
17
—
20
—
25
—
ns
tEW
Chip Enable to End-of-Write
(3)
12
—
12
—
15
—
20
—
ns
tAW
Address Valid to End-of-Write
12
—
12
—
15
—
20
—
ns
tAS
Address Set-up Time
(3)
0
—
0
—
0
—
0
—
ns
tWP
Write Pulse Width
12
—
12
—
15
—
20
—
ns
tWR
Write Recovery Time
0
—
0
—
0
—
0
—
ns
tDW
Data Valid to End-of-Write
10
—
10
—
15
—
15
—
ns
tHZ
Output High-Z Time
(1, 2)
—
10
—
10
—
12
—
15
ns
tDH
Data Hold Time
(4)
0
—
0
—
0
—
0
—
ns
tWZ
Write Enable to Output in High-Z
(1, 2)
—
10
—
10
—
12
—
15
ns
tOW
Output Active from End-of-Write
(1, 2, 4)
0
—
0
—
0
—
0
—
ns
tSWRD
SEM Flag Write to Read Time
5
—
5
—
5
—
5
—
ns
tSPS
SEM Flag Contention Window
5
—
5
—
5
—
5
—
ns
IDT7005X35
IDT7005X55
IDT7005X70
Mil. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
35
—
55
—
70
—
ns
tEW
Chip Enable to End-of-Write
(3)
30
—
45
—
50
—
ns
tAW
Address Valid to End-of-Write
30
—
45
—
50
—
ns
tAS
Address Set-up Time
(3)
0—
ns
tWP
Write Pulse Width
25
—
40
—
50
—
ns
tWR
Write Recovery Time
0
—
0
—
0
—
ns
tDW
Data Valid to End-of-Write
15
—
30
—
40
—
ns
tHZ
Output High-Z Time
(1, 2)
—15—25
—30
ns
tDH
Data Hold Time
(4)
0—
ns
tWZ
Write Enable to Output in High-Z
(1, 2)
—15—25
—30
ns
tOW
Output Active from End-of-Write
(1, 2, 4)
0—
ns
tSWRD
SEM Flag Write to Read Time
5
—
5
—
5
—
ns
tSPS
SEM Flag Contention Window
5
—
5
—
5
—
ns
NOTES:
2738 tbl 14
1. Transition is measured
±500mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. To access RAM,
CE = VIL, SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary
over voltage and temperature, the actual tDH will always be smaller than the actual tOW.
5. "X" in part numbers indicates power rating (S or L).
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE (5)
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