參數(shù)資料
型號(hào)： IDT7005S35PFB
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： PWM and ULDO Controller Combo
中文描述： 8K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
封裝： 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64
文件頁(yè)數(shù)： 20/20頁(yè)
文件大?。?/td> 265K
代理商： IDT7005S35PFB
IDT7005S/L
HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.06
9
IDT7005X15
IDT7005X17
IDT7005X20
IDT7005X25
Com'l. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
15
—
17
—
20
—
25
—
ns
tEW
Chip Enable to End-of-Write
(3)
12
—
12
—
15
—
20
—
ns
tAW
Address Valid to End-of-Write
12
—
12
—
15
—
20
—
ns
tAS
Address Set-up Time
(3)
0
—
0
—
0
—
0
—
ns
tWP
Write Pulse Width
12
—
12
—
15
—
20
—
ns
tWR
Write Recovery Time
0
—
0
—
0
—
0
—
ns
tDW
Data Valid to End-of-Write
10
—
10
—
15
—
15
—
ns
tHZ
Output High-Z Time
(1, 2)
—
10
—
10
—
12
—
15
ns
tDH
Data Hold Time
(4)
0
—
0
—
0
—
0
—
ns
tWZ
Write Enable to Output in High-Z
(1, 2)
—
10
—
10
—
12
—
15
ns
tOW
Output Active from End-of-Write
(1, 2, 4)
0
—
0
—
0
—
0
—
ns
tSWRD
SEM Flag Write to Read Time
5
—
5
—
5
—
5
—
ns
tSPS
SEM Flag Contention Window
5
—
5
—
5
—
5
—
ns
IDT7005X35
IDT7005X55
IDT7005X70
Mil. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
35
—
55
—
70
—
ns
tEW
Chip Enable to End-of-Write
(3)
30
—
45
—
50
—
ns
tAW
Address Valid to End-of-Write
30
—
45
—
50
—
ns
tAS
Address Set-up Time
(3)
0—
ns
tWP
Write Pulse Width
25
—
40
—
50
—
ns
tWR
Write Recovery Time
0
—
0
—
0
—
ns
tDW
Data Valid to End-of-Write
15
—
30
—
40
—
ns
tHZ
Output High-Z Time
(1, 2)
—15—25
—30
ns
tDH
Data Hold Time
(4)
0—
ns
tWZ
Write Enable to Output in High-Z
(1, 2)
—15—25
—30
ns
tOW
Output Active from End-of-Write
(1, 2, 4)
0—
ns
tSWRD
SEM Flag Write to Read Time
5
—
5
—
5
—
ns
tSPS
SEM Flag Contention Window
5
—
5
—
5
—
ns
NOTES:
2738 tbl 14
1. Transition is measured
±500mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. To access RAM,
CE = VIL, SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary
over voltage and temperature, the actual tDH will always be smaller than the actual tOW.
5. "X" in part numbers indicates power rating (S or L).
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE (5)
相關(guān)PDF資料
PDF描述
IDT7005S55F HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
IDT7005S55FB PWM and ULDO Controller Combo; Package: SOIC; No of Pins: 16; Container: Tape & Reel
IDT7005S55G HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
IDT7005S55GB Synchronous DC-DC MOSFET Driver; ; No of Pins: 8; Container: Tape & Reel
IDT7005S55J Synchronous DC-DC MOSFET Driver; ; No of Pins: 8; Container: Tape & Reel
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7005S35PFG 功能描述:IC SRAM 64KBIT 35NS 64TQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
IDT7005S35PFG8 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 64TQFP
IDT7005S35PFI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM
IDT7005S35XL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM
IDT7005S35XLB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*