參數(shù)資料
型號: IDT7005S35PF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: PWM and ULDO Controller Combo
中文描述: 8K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
封裝: 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64
文件頁數(shù): 4/20頁
文件大?。?/td> 265K
代理商: IDT7005S35PF
6.06
12
IDT7005S/L
HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
tWH
Write Hold After
BUSY(5)
25
25
25
ns
BUSY TIMING (M/
SSSSS = VIL)
tWB
BUSY Input to Write(4)
0—
ns
tWH
Write Hold After
BUSY
(5)
25
25
25
ns
PORT-TO-PORT DELAY TIMING
tWDD
Write Pulse to Data Delay
(1)
—60—80
—95
ns
tDDD
Write Data Valid to Read Data Delay
(1)
—45—65
—80
ns
BUSY TIMING (M/
SSSSS = VIL)
tWB
BUSY Input to Write(4)
0
0
0
0
ns
tWH
Write Hold After
BUSY
(5)
12
13
15
17
ns
PORT-TO-PORT DELAY TIMING
tWDD
Write Pulse to Data Delay
(1)
30
30
45
50
ns
tDDD
Write Data Valid to Read Data Delay
(1)
25
—25—35
—35
ns
IDT7005X15 IDT7005X17
IDT7005X20
IDT7005X25
Com'l. Only
Symbol
Parameter
Min. Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/
SSSSS = VIH)
tBAA
BUSY Access Time from Address Match
15
17
20
20
ns
tBDA
BUSY Disable Time from Address Not Matched —
15
17
20
20
ns
tBAC
BUSY Access Time from Chip Enable Low
15
17
20
20
ns
tBDC
BUSY Disable Time from Chip Enable High
15
17
17
17
ns
tAPS
Arbitration Priority Set-up Time
(2)
5
5
5
5
ns
tBDD
BUSY Disable to Valid Data
(3)
18
18
30
30
ns
tWH
Write Hold After
BUSY(5)
12
13
15
17
ns
IDT7005X35
IDT7005X55
IDT7005X70
Mil. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/
SSSSS = VIH)
tBAA
BUSY Access Time from Address Match
20
45
45
ns
tBDA
BUSY Disable Time from Address Not Matched
20
40
40
ns
tBAC
BUSY Access Time from Chip Enable Low
20
40
40
ns
tBDC
BUSY Disable Time from Chip Enable High
20
35
35
ns
tAPS
Arbitration Priority Set-up Time
(2)
5—
ns
tBDD
BUSY Disable to Valid Data(3)
—35—40
—45
ns
NOTES:
2738 tbl 15
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and
BUSY".
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual), or tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited on port "B" during contention with port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
6. "X" in part numbers indicates power rating (S or L).
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(6)
相關(guān)PDF資料
PDF描述
IDT7005S35PFB PWM and ULDO Controller Combo
IDT7005S55F HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
IDT7005S55FB PWM and ULDO Controller Combo; Package: SOIC; No of Pins: 16; Container: Tape & Reel
IDT7005S55G HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
IDT7005S55GB Synchronous DC-DC MOSFET Driver; ; No of Pins: 8; Container: Tape & Reel
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7005S35PF8 功能描述:IC SRAM 64KBIT 35NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT7005S35PFB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
IDT7005S35PFG 功能描述:IC SRAM 64KBIT 35NS 64TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(單線) 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP,8-MSOP(0.118",3.00mm 寬) 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
IDT7005S35PFG8 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 64TQFP
IDT7005S35PFI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM