參數(shù)資料
型號(hào): IDT7005S35F
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
中文描述: 8K X 8 DUAL-PORT SRAM, 35 ns, QFP68
封裝: 0.970 X 0.970 INCH, 0.080 INCH HEIGHT, QFP-68
文件頁數(shù): 20/20頁
文件大?。?/td> 265K
代理商: IDT7005S35F
IDT7005S/L
HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.06
9
IDT7005X15
IDT7005X17
IDT7005X20
IDT7005X25
Com'l. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
15
17
20
25
ns
tEW
Chip Enable to End-of-Write
(3)
12
12
15
20
ns
tAW
Address Valid to End-of-Write
12
12
15
20
ns
tAS
Address Set-up Time
(3)
0
0
0
0
ns
tWP
Write Pulse Width
12
12
15
20
ns
tWR
Write Recovery Time
0
0
0
0
ns
tDW
Data Valid to End-of-Write
10
10
15
15
ns
tHZ
Output High-Z Time
(1, 2)
10
10
12
15
ns
tDH
Data Hold Time
(4)
0
0
0
0
ns
tWZ
Write Enable to Output in High-Z
(1, 2)
10
10
12
15
ns
tOW
Output Active from End-of-Write
(1, 2, 4)
0
0
0
0
ns
tSWRD
SEM Flag Write to Read Time
5
5
5
5
ns
tSPS
SEM Flag Contention Window
5
5
5
5
ns
IDT7005X35
IDT7005X55
IDT7005X70
Mil. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
35
55
70
ns
tEW
Chip Enable to End-of-Write
(3)
30
45
50
ns
tAW
Address Valid to End-of-Write
30
45
50
ns
tAS
Address Set-up Time
(3)
0—
ns
tWP
Write Pulse Width
25
40
50
ns
tWR
Write Recovery Time
0
0
0
ns
tDW
Data Valid to End-of-Write
15
30
40
ns
tHZ
Output High-Z Time
(1, 2)
—15—25
—30
ns
tDH
Data Hold Time
(4)
0—
ns
tWZ
Write Enable to Output in High-Z
(1, 2)
—15—25
—30
ns
tOW
Output Active from End-of-Write
(1, 2, 4)
0—
ns
tSWRD
SEM Flag Write to Read Time
5
5
5
ns
tSPS
SEM Flag Contention Window
5
5
5
ns
NOTES:
2738 tbl 14
1. Transition is measured
±500mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but is not production tested.
3. To access RAM,
CE = VIL, SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary
over voltage and temperature, the actual tDH will always be smaller than the actual tOW.
5. "X" in part numbers indicates power rating (S or L).
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE (5)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7005S35FB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
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IDT7005S35GB 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 35NS 68PGA
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IDT7005S35J8 功能描述:IC SRAM 64KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI