參數(shù)資料
型號(hào): IDT7005S25PF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
中文描述: 8K X 8 DUAL-PORT SRAM, 25 ns, PQFP64
封裝: 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64
文件頁數(shù): 18/20頁
文件大小: 265K
代理商: IDT7005S25PF
IDT7005S/L
HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.06
7
AC TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
5ns Max.
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
Output Load
Figure 1 and 2
2738 tbl 12
IDT7005X35
IDT7005X55
IDT7005X70
Mil. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
35
55
70
ns
tAA
Address Access Time
35
55
70
ns
tACE
Chip Enable Access Time
(3)
—35—55
—70
ns
tAOE
Output Enable Access Time
20
30
35
ns
tOH
Output Hold from Address Change
3
3
3
ns
tLZ
Output Low-Z Time
(1, 2)
3—
ns
tHZ
Output High-Z Time
(1, 2)
—15—25
—30
ns
tPU
Chip Enable to Power Up Time
(2)
0—
ns
tPD
Chip Disable to Power Down Time
(2)
—35—50
—50
ns
tSOP
Semaphore Flag Update Pulse (
OE or SEM)
15—15
—15—
ns
tSAA
Semaphore Address Access Time
35
55
70
ns
NOTES:
2738 tbl 13
1. Transition is measured
±500mV from Low or High-impedance voltage with Output Test Load (Figures 2).
2. This parameter is guaranteed by device characterization but not production tested.
3. To access RAM,
CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL.
4. "X" in part numbers indicates power rating (S or L).
1250
30pF
775
DATAOUT
BUSY
INT
5V
1250
5pF
775
DATAOUT
2738 drw 06
Figure 1. AC Output Test Load
Figure 2. Output Load
(For tLZ, tHZ, tWZ, tOW)
Including scope and jig
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(4)
AC ELECTRICAL CHARACTERISTICS OVER THE
IDT7005X15
IDT7005X17
IDT7005X20
IDT7005X25
Com'l. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
15
17
20
25
ns
tAA
Address Access Time
15
17
20
25
ns
tACE
Chip Enable Access Time
(3)
15
17
20
25
ns
tAOE
Output Enable Access Time
10
10
12
13
ns
tOH
Output Hold from Address Change
3
3
3
ns
tLZ
Output Low-Z Time
(1, 2)
3
3
3
3
ns
tHZ
Output High-Z Time
(1, 2)
10
10
12
15
ns
tPU
Chip Enable to Power Up Time
(2)
0
0
0
ns
tPD
Chip Disable to Power Down Time
(2)
15
17
20
25
ns
tSOP
Semaphore Flag Update Pulse (
OE or SEM)
10
10
10
ns
tSAA
Semaphore Address Access Time
15
17
20
25
ns
相關(guān)PDF資料
PDF描述
IDT7005S25PFB HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
IDT7005S35F HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
IDT7005S35FB DDR-1/DDR-2 plus ACPI Regulator Combo; Package: MLP; No of Pins: 24; Container: Tape & Reel
IDT7005S35G PWM and ULDO Controller Combo; Package: TSSOP; No of Pins: 16; Container: Tape & Reel
IDT7005S35GB PWM and ULDO Controller Combo; Package: TSSOP; No of Pins: 16; Container: Tape & Reel
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7005S25PF8 功能描述:IC SRAM 64KBIT 25NS 64TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT7005S25PFB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
IDT7005S25XL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM
IDT7005S35F 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM
IDT7005S35FB 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM