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| 型號(hào)： | IDT6116SA120DB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | TRANS NPN 100VCEO 2A MT-2 |
| 中文描述： | 2K X 8 STANDARD SRAM, 120 ns, CDIP24 |
| 封裝： | 0.600 INCH, CERAMIC, DIP-24 |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | IDT6116SA120DB |
5.1
8
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6116SA15
(1)
6116LA15
(1)
Min.
6116SA20
6116LA20
Min.
6116SA25
6116LA25
Min.
6116SA35
6116LA35
Min.
Symbol
WRITE CYCLE
t
WC
t
CW
Parameter
Max.
Max.
Max.
Max.
Unit
Write Cycle Time
Chip Select to End-of-
Write
Address Valid to End-
of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output
in High-Z
Data to Write Time
Overlap
Data Hold from Write
Time
Output Active from
End-of-Write
15
13
—
—
20
15
—
—
25
17
—
—
35
25
—
—
ns
ns
t
AW
14
—
15
—
17
—
25
—
ns
t
AS
t
WP
t
WR
t
WHZ
(3)
0
—
—
—
7
0
12
0
—
—
—
—
8
0
15
0
—
—
—
—
16
0
20
0
—
—
—
—
20
ns
ns
ns
ns
12
0
—
t
DW
12
—
12
—
13
—
15
—
ns
t
DH
(4)
0
—
0
—
0
—
0
—
ns
t
OW
(3,4)
0
—
0
—
0
—
0
—
ns
3089 tbl 14
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, All Temperature Ranges)
6116SA45
6116LA45
Min.
6116SA55
(2)
6116LA55
(2)
Min.
6116SA70
(2)
6116LA70
(2)
Min. Max.
6116SA90
(2)
6116LA90
(2)
Min.
6116SA120
(2)
6116LA120
(2)
Min.
6116SA150
(2)
6116LA150
(2)
Min.
Symbol
WRITE CYCLE
t
WC
t
CW
Parameter
Max.
Max.
Max.
Max.
Max.
Unit
Write Cycle Time
Chip Select to End of
Write
Address Valid to End
of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output
in High-Z
Data to Write Time
Overlap
Data Hold from Write
Time
Output Active from
End of Write
45
30
—
—
55
40
—
—
70
40
—
—
90
55
—
—
120
70
—
—
150
90
—
—
ns
ns
t
AW
30
—
45
—
65
—
80
—
105
—
120
—
ns
t
AS
t
WP
t
WR
t
WHZ
(3)
0
—
—
—
25
5
40
5
—
—
—
—
30
15
40
5
—
—
—
—
35
15
55
5
—
—
—
—
40
20
70
5
—
—
—
—
40
20
90
10
—
—
—
—
40
ns
ns
ns
ns
25
0
—
t
DW
20
—
25
—
30
—
30
—
35
—
40
—
ns
t
DH
(4)
0
—
5
—
5
—
5
—
5
—
10
—
ns
t
OW
(3,4)
0
—
0
—
0
—
0
—
0
—
0
—
ns
NOTES:
1. 0
°
C to +70
°
C temperature range only.
2. –55
°
C to +125
°
C temperature range only.
3. This parameter guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operation conditions. Although t
DH
and t
OW
values will vary
over voltage and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
3089 tbl 15
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
±
10%, All Temperature Ranges)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT6116SA120P | CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA120PB | CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA120SO | CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA120TD | CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA120TDB | CMOS STATIC RAM 16K (2K x 8 BIT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT6116SA120EB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| IDT6116SA120L24B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| IDT6116SA120P | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA120PB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA120SO | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
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