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參數(shù)資料
| 型號(hào)： | IDT6116LA90TDB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SO 0 to 70 |
| 中文描述： | 2K X 8 STANDARD SRAM, 90 ns, CDIP24 |
| 封裝： | 0.300 INCH, CERAMIC, DIP-24 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | IDT6116LA90TDB |
5.1
5
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
LOW V
CC
DATA RETENTION WAVEFORM
Figure 2. AC Test Load
(for t
OLZ
, t
CLZ
, t
OHZ
,
t
WHZ
, t
CHZ
& t
OW
)
Figure 1. AC Test Load
*Including scope and jig.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
3089 tbl 11
5pF*
255
5V
480
DATA
OUT
3089 drw 05
3089 drw 04
30pF*
255
5V
DATA
OUT
480
DATA RETENTION MODE
V
CC
CS
t
CDR
4.5V
V
DR
≥
2V
V
DR
4.5V
t
R
V
IH
V
IH
3089 drw 03
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT6116LA90TP | Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SO 0 to 70 |
| IDT6116LA90TPB | Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-SO 0 to 70 |
| IDT6116LA90Y | Quad Enhanced JFET Low-Power Precision Operational Amplifier 14-TSSOP 0 to 70 |
| IDT6116SA35DB | Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-SOIC -40 to 85 |
| IDT6116SA35P | Enhanced-JFET Low-Power Low-Offset Quad Operational Amplifier 14-SOIC -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT6116LA90TP | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116LA90TPB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116LA90Y | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116LA90YB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116LAE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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