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參數(shù)資料
| 型號(hào)： | IDT6116LA55Y |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-PDIP 0 to 70 |
| 中文描述： | 的CMOS靜態(tài)RAM 16K的（2K × 8位） |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | IDT6116LA55Y |
5.1
10
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ORDERING INFORMATION
Blank
B
TP
P
TD
D
SO
Y
15
20
25
35
45
55
70
90
120
150
SA
LA
Commercial (0
°
C to +70
°
C)
Military (-55
°
C to + 125
°
C)
Compliant to MIL-STD-883, Class B
300 mil Plastic DIP (P24-1)
600 mil Plastic DIP (P24-2)
300 mil CERDIP (D24-1)
600 mil CERDIP (D24-2)
300 mil Small Outline IC, Gull-Wing Bend (SO24-2)
300 mil SOJ, J-Bend (SO24-4)
Commercial Only
Military Only
Military Only
Military Only
Military Only
Military Only
Standard Power
Low Power
IDT
6116
Device Type
XX
Power
XXX
Speed
X
Package
X
Process/
Temperature
Range
3089 drw 11
Speed in nanoseconds
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT6116LA70D | Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC -40 to 85 |
| IDT6116LA70DB | Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC -40 to 85 |
| IDT6116LA70P | Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC -40 to 85 |
| IDT6116LA70PB | Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC -40 to 85 |
| IDT6116LA70SO | Enhanced-JFET Low-Power Low-Offset Dual Operational Amplifier 8-SOIC -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT6116LA55YB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116LA70D | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116LA70DB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 70NS 24CERDIP |
| IDT6116LA70L24B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| IDT6116LA70P | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
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